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參數(shù)資料
| 型號： | PHX2N60E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistors Avalanche energy rated |
| 中文描述： | 1.3 A, 600 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
| 封裝： | FULL PACK-3 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 65K |
| 代理商： | PHX2N60E |
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHX2N60E
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 C; V
DS
= V
GS
Fig.12. Typical capacitances, C
, C
, C
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
); parameter V
DS
Fig.14. Typical switching times t
d(on)
, t
r
, t
d(off)
, t
f
= f(R
G
)
Fig.15. Normalised drain-source breakdown voltage
V
(BR)DSS
/V
(BR)DSS 25 C
= f(T
j
)
Fig.16. Source-Drain diode characteristic.
I
F
= f(V
SDS
); parameter T
j
0
1
2
VGS / V
3
4
ID / A
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
SUB-THRESHOLD CONDUCTION
typ
2 %
98 %
0
20
40
60
80
100
1
10
100
1000
tr
tf
PHP1N60A
Gate resistance, RG (Ohms)
Switching times, td(on), tr, td(off), tf (ns)
td(on)
td(off)
VDD = 300 V
RD = 150 Ohms
Tj = 25 C
1
10
100
1000
1
10
100
1000
PHP1N60A
Drain-source voltage, VDS (V)
Capacitances, Ciss, Coss, Crss (pF)
Ciss
Coss
Crss
-100
-50
0
50
100
150
0.85
0.9
0.95
1
1.05
1.1
1.15
Tj, Junction temperature (C)
Normalised Drain-source breakdown voltage
V(BR)DSS @ Tj
V(BR)DSS @ 25 C
0
10
20
30
40
0
5
10
15
20
PHP1N60A
Gate charge, Qg (nC)
Gate-Source voltage, VGS (Volts)
VDD = 480 V
240 V
120 V
ID = 2 A
0
0.5
1
1.5
0
2
4
6
8
10
PHP1N60A
Source-Drain voltage, VSDS (V)
Source-drain diode current, IF(A)
VGS = 0 V
150 C
Tj = 25 C
December 1998
5
Rev 1.200
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