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參數(shù)資料
| 型號： | PHX23NQ10T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel TrenchMOS transistor |
| 中文描述： | 13 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, FPAK-3 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 61K |
| 代理商： | PHX23NQ10T |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PHX23NQ10T
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
)
Fig.8. Typical transconductance, T
j
= 25 C
g
fs
= f(I
D
)
Fig.9. Normalised drain-source on-state resistance.
R
DS(ON)
/R
DS(ON)25 C
= f(T
j
)
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 C; V
DS
= V
GS
Fig.12. Typical capacitances, C
, C
, C
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
0
10
20
30
40
50
0
2
4
6
8
10
VGS / V
ID / A
Tj / C = 25
150
Threshold Voltage, VGS(TO) (V)
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
-60 -40 -20
0
20
40
60
80 100 120 140 160
Junction Temperature, Tj (C)
0
2
4
6
8
10
12
14
16
18
20
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
Drain current, ID / (A)
Transconductance, gfs (S)
150 C
Tj = 25 C
Drain current, ID (A)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Gate-source voltage, VGS (V)
minimum
typical
maximum
Normalised On-state Resistance.
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
-60 -40 -20
20
40
60
80 100 120 140 160
Ju0
10
100
1000
10000
0.1
1
10
100
Drain-Source Voltage, VDS (V)
Capacitances, Ciss, Coss, Crss (pF)
Ciss
Coss
Crss
September 1999
5
Rev 1.000
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