參數(shù)資料
型號(hào)： PHX23NQ10T
廠商： NXP SEMICONDUCTORS
元件分類(lèi)： JFETs
英文描述： N-channel TrenchMOS transistor
中文描述： 13 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, FPAK-3
文件頁(yè)數(shù)： 4/8頁(yè)
文件大?。?/td> 61K
代理商： PHX23NQ10T
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PHX23NQ10T
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 C
= f(T
mb
)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 C
= f(T
mb
); conditions: V
GS
≥
10 V
Fig.3. Safe operating area. T
= 25 C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
Fig.5. Typical output characteristics, T
j
= 25 C
I
D
= f(V
DS
)
Fig.6. Typical on-state resistance, T
j
= 25 C
R
DS(ON)
= f(I
D
)
Normalised Power Derating, PD (%)
0
10
20
30
40
50
60
70
80
90
100
0
25
50
75
100
125
150
Mounting Base temperature, Tmb (C)
0.01
0.1
1
10
1E-06
1E-05
1E-04
1E-03
Pulse width, tp (s)
1E-02
1E-01
1E+00
1E+01
Transient thermal impedance, Zth j-a (K/W)
single pulse
D = 0.5
0.2
0.1
0.05
0.02
Normalised Current Derating, ID (%)
0
10
20
30
40
50
60
70
80
90
100
0
25
50
75
100
125
150
Mounting Base temperature, Tmb (C)
0
5
10
15
20
25
30
35
40
45
50
55
0
1
2
3
4
5
6
7
8
9
10
Drain-Source Voltage, VDS (V)
Drain Current, ID (A)
4V
5 V
6 V
7 V
9 V
8 V
0.1
1
10
100
1000
1
10
100
1000
Drain-Source Voltage, VDS (V)
Peak Pulsed Drain Current, IDM (A)
D.C.
100 ms
10 ms
RDS(on) = VDS/ ID
1 ms
tp = 10 us
100us
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
10
20
30
40
50
Drain Current, ID (A)
Drain-Source On Resistance, RDS(on) (Ohms)
VGS =9 V
8V
6V
7 V
5 V
4V
5.5V
6.5V
September 1999
4
Rev 1.000
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