參數(shù)資料
型號(hào)： PHX1N40
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： Circular Connector; Body Material:Aluminum Alloy; Series:KPT00; No. of Contacts:39; Connector Shell Size:20; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Pin RoHS Compliant: No
中文描述： 1.7 A, 400 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC PACKAGE-3
文件頁數(shù)： 5/7頁
文件大?。?/td> 60K
代理商： PHX1N40
Philips Semiconductors
Product specification
PowerMOS transistor
PHX1N40
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
); parameter V
DS
Fig.14. Typical switching times
t
d(on)
, t
r
, t
d(off)
, t
f
= f(R
G
)
Fig.15. Normalised drain-source breakdown voltage
V
(BR)DSS
/V
(BR)DSS 25 C
= f(T
j
)
Fig.16. Source-Drain diode characteristic.
I
F
= f(V
SDS
); parameter T
j
Fig.17. Normalised unclamped inductive energy.
E
AS
% = f(T
j
)
Fig.18. Unclamped inductive test circuit.
E
AS
=
0.5
LI
D
0
10
20
30
40
0
5
10
15
20
PHP2N40
Gate charge, Qg (nC)
Gate-Source voltage, VGS (Volts)
VDD = 320 V
200 V
100 V
ID = 2.5 A
0
0.5
1
1.5
0
2
4
6
8
10
PHP2N40
Source-Drain voltage, VSDS (V)
Source-drain diode current, IF(A)
VGS = 0 V
Tj = 25 C
150 C
0
20
40
60
80
100
1
10
100
1000
tr
tf
PHP2N40
Gate resistance, RG (Ohms)
Switching times, td(on), tr, td(off), tf (ns)
VDD = 200V
RD = 78 Ohms
Tj = 25 C
td(on)
td(off)
20
40
60
80
100
120
140
Starting Tj ( C)
120
110
100
90
80
70
60
50
40
30
20
10
0
EAS, Normalised unclamped inductive energy (%)
-100
-50
0
50
100
150
0.85
0.9
0.95
1
1.05
1.1
1.15
Tj, Junction temperature (C)
Normalised Drain-source breakdown voltage
V(BR)DSS @ Tj
V(BR)DSS @ 25 C
L
T.U.T.
VDD
RGS
R 01
shunt
VDS
-ID/100
+
-
VGS
0
2
V
(
BR
)
DSS
/(
V
(
BR
)
DSS
V
DD
)
June 1997
5
Rev 1.000
相關(guān)PDF資料
PDF描述
PHX1N50E Circular Connector; Body Material:Aluminum Alloy; Series:KPT00; No. of Contacts:41; Connector Shell Size:20; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Pin RoHS Compliant: No
PHX1N60E Circular Connector; Body Material:Aluminum Alloy; Series:KPT00; No. of Contacts:41; Connector Shell Size:20; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Socket RoHS Compliant: No
PHX23NQ10T N-channel TrenchMOS transistor
PHX2N40E Circular Connector; Body Material:Aluminum Alloy; Series:KPT00; No. of Contacts:21; Connector Shell Size:22; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Pin RoHS Compliant: No
PHX2N50E PowerMOS transistors Avalanche energy rated
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PHX1N40E 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of PHP2N40E
PHX1N50E 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version fo PHP1N50E
PHX1N60E 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of PHP1N60E
PHX20N06T 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHX20N06T,127 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*