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參數(shù)資料
| 型號： | PHX1N40 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | Circular Connector; Body Material:Aluminum Alloy; Series:KPT00; No. of Contacts:39; Connector Shell Size:20; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Pin RoHS Compliant: No |
| 中文描述： | 1.7 A, 400 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大小： | 60K |
| 代理商： | PHX1N40 |
Philips Semiconductors
Product specification
PowerMOS transistor
PHX1N40
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 C
= f(T
hs
)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 C
= f(T
hs
); conditions: V
GS
≥
10 V
Fig.3. Safe operating area. T
= 25 C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-hs
= f(t); parameter D = t
p
/T
Fig.5. Typical output characteristics
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance
R
DS(ON)
= f(I
D
); parameter V
GS
0
20
40
60
80
100
120
140
Ths / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
1E-07
1E-05
1E-03
t / s
1E-01
1E+01
Zth j-hs / (K/W)
1E+01
1E+00
1E-01
1E-02
0
0.5
0.2
0.1
0.05
0.02
D =
t
p
t
p
T
T
P
D
t
ZTHX43
0
20
40
60
80
100
120
140
Ths / C
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
0
5
10
15
20
25
30
0
1
2
3
4
5
6
7
8
5 V
5.5 V
6 V
6.5 V
7 V
PHP2N40
VDS, Drain-Source voltage (Volts)
ID, Drain current (Amps)
10 V
20 V
VGS = 4.5 V
Tj = 25 C
10
100
1000
0.01
0.1
1
10
PHX1N40
tp =
Drain-source voltage, VDS (Volts)
Drain current, ID (Amps)
RDS(ON) = VDS/ID
DC
100us
1ms
10ms
100ms
10 us
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
6.5 V
7 V
10 V
VGS = 20 V
PHP2N40
Drain current, ID (Amps)
Drain-Source on resistance, RDS(ON) (Ohms)
6 V
5.5 V
5V
Tj = 25 C
June 1997
3
Rev 1.000
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| PHX1N40E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of PHP2N40E |
| PHX1N50E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version fo PHP1N50E |
| PHX1N60E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of PHP1N60E |
| PHX20N06T | 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHX20N06T,127 | 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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