參數(shù)資料
型號: PHX18NQ11T
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: N-channel TrenchMOS standard level FET
中文描述: 12.5 A, 110 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, TO-220F, FULL PACK-3
文件頁數(shù): 7/12頁
文件大?。?/td> 94K
代理商: PHX18NQ11T
Philips Semiconductors
PHX18NQ11T
N-channel TrenchMOS standard level FET
Product data
Rev. 01 — 13 February 2004
7 of 12
9397 750 12915
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
I
D
= 1 mA; V
DS
= V
GS
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
T
j
= 25
°
C
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
V
GS
= 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
03aa32
0
1
2
3
4
5
-60
0
60
120
180
Tj (
°
C)
VGS(th)
(V)
max
min
typ
03aa35
10-6
10-5
10-4
10-3
10-2
10-1
ID
(A)
0
2
4
6
VGS (V)
max
typ
min
03am67
10
102
103
104
10-1
1
10
102
VDS (V)
C
(pF)
Ciss
Coss
Crss
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