參數(shù)資料
型號(hào)： PHX15N06E
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： Circular Connector; Body Material:Aluminum Alloy; Series:KPT00; No. of Contacts:16; Connector Shell Size:20; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Socket RoHS Compliant: No
中文描述： 13 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù)： 5/7頁
文件大小： 57K
代理商： PHX15N06E
Philips Semiconductors
Product specification
PowerMOS transistor
PHX15N06E
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 C; V
DS
= V
GS
Fig.12. Typical capacitances, C
, C
, C
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
); conditions: I
D
= 22 A; parameter V
DS
Fig.14. Typical reverse diode current.
I
F
= f(V
SDS
); conditions: V
GS
= 0 V; parameter T
j
Fig.15. Normalised avalanche energy rating.
W
DSS
% = f(T
hs
); conditions: I
D
= 22 A
Fig.16. Avalanche energy test circuit.
W
DSS
=
0.5
LI
D
0
1
2
VGS / V
3
4
ID / A
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
SUB-THRESHOLD CONDUCTION
typ
2 %
98 %
0
1
2
BUK453-50A
VSDS / V
50
40
30
20
10
0
IF / A
150
25
Tj / C =
0
20
40
VDS / V
C / pF
Ciss
Coss
Crss
10
100
1000
10000
BUK4y3-50
20
40
60
80
Ths / C
100
120
140
120
110
100
90
80
70
60
50
40
30
20
10
0
WDSS%
0
10
20
QG / nC
VGS / V
12
10
8
6
4
2
0
VDS / V =12
48
BUK453-60
L
T.U.T.
VDD
RGS
R 01
shunt
VDS
-ID/100
+
-
VGS
0
2
BV
DSS
/(
BV
DSS
V
DD
)
November 1996
5
Rev 1.000
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PHX1N40E Circular Connector; Body Material:Aluminum Alloy; Series:KPT00; No. of Contacts:39; Connector Shell Size:20; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Socket RoHS Compliant: No
PHX1N40 Circular Connector; Body Material:Aluminum Alloy; Series:KPT00; No. of Contacts:39; Connector Shell Size:20; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Pin RoHS Compliant: No
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