參數(shù)資料
型號(hào): PHT11N06T
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: TrenchMOS transistor Standard level FET
中文描述: 4.9 A, 55 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC PACKAGE-4
文件頁(yè)數(shù): 4/9頁(yè)
文件大小: 69K
代理商: PHT11N06T
Philips Semiconductors
Product specification
TrenchMOS
transistor
Logic level FET
PHT11N06LT
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 C
= f(T
sp
)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 C
= f(T
sp
); conditions: V
GS
5 V
Fig.3. Safe operating area. T
= 25 C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-sp
= f(t); parameter D = t
p
/T
Fig.5. Typical output characteristics, T
j
= 25 C
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 C
R
DS(ON)
= f(I
D
); parameter V
GS
0
20
40
60
80
100
120
140
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
1E-07
1E-05
1E-03
t / s
1E-01
1E+01
Zth / (K/W)
1E+02
3E+01
1E+01
3E+00
1E+00
3E-01
1E-01
3E-02
1E-02
0
0.5
0.2
0.1
0.05
0.02
D =
t
p
t
p
T
T
P
D
t
BUK9840-55
0
20
40
60
80
100
120
140
Tmb / C
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0
2
4
6
8
10
0
5
10
15
20
2.2
2.4
2.6
2.8
3.0
3.2
3.4
4
3.6
10
5
ID/A
VGS/V =
BUKX840-55
VDS/V
ID/A
1 us
10 us
100 us
1 ms
10 ms
100 ms
tp =
0.1
1
10
100
0.1
1
10
55
RDS(ON) = VDS/ID
DC
0
5
10
15
20
25
20
30
40
50
60
70
80RDS(ON)/mOhm
VGS/V =
ID/A
5
4
3.6
3.4
3.2
3
January 1998
4
Rev 1.100
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