參數(shù)資料
型號(hào)： PHP21N06
廠商： NXP Semiconductors N.V.
英文描述： TrenchMOSO transistor Standard level FET
中文描述： TrenchMOSO標(biāo)準(zhǔn)水平場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 65K
代理商： PHP21N06
Philips Semiconductors
Product specification
TrenchMOS
transistor
Standard level FET
PHP21N06T
STATIC CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL
PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA;
MIN.
55
50
2.0
1.0
-
-
-
-
-
16
-
-
TYP.
-
-
3.0
-
-
0.05
-
0.04
-
-
60
-
MAX.
-
-
4.0
-
4.4
10
500
1
20
-
75
157
UNIT
V
V
V
V
T
j
= -55C
V
DS
= V
GS
; I
D
= 1 mA
T
j
= 175C
T
j
= -55C
I
DSS
Zero gate voltage drain current
V
DS
= 55 V; V
GS
= 0 V;
μ
A
μ
A
μ
A
μ
A
V
m
m
T
j
= 175C
I
GSS
Gate source leakage current
V
GS
=
±
10 V; V
DS
= 0 V
T
j
= 175C
±
V
(BR)GSS
R
DS(ON)
Gate source breakdown voltage I
G
=
±
1 mA;
Drain-source on-state
resistance
V
GS
= 10 V; I
D
= 10 A
T
j
= 175C
DYNAMIC CHARACTERISTICS
T
mb
= 25C unless otherwise specified
SYMBOL
PARAMETER
g
fs
Forward transconductance
Q
g(tot)
Total gate charge
Q
gs
Gate-source charge
Q
gd
Gate-drain (Miller) charge
C
iss
Input capacitance
C
oss
Output capacitance
C
rss
Feedback capacitance
t
d on
Turn-on delay time
t
r
Turn-on rise time
t
d off
Turn-off delay time
t
f
Turn-off fall time
L
d
Internal drain inductance
CONDITIONS
V
DS
= 25 V; I
D
= 10 A
I
D
= 20 A; V
DD
= 44 V; V
GS
= 10 V
MIN.
1
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
13
4
5
365
110
60
9
16
14
13
3.5
MAX.
-
-
-
-
500
135
85
14
21
25
20
-
UNIT
S
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
V
DD
= 30 V; I
D
= 10 A;
V
= 10 V; R
G
= 10
Resistive load
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
L
d
Internal drain inductance
-
4.5
-
nH
L
s
Internal source inductance
-
7.5
-
nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL
PARAMETER
I
DR
Continuous reverse drain
current
I
DRM
Pulsed reverse drain current
V
SD
Diode forward voltage
t
rr
Reverse recovery time
Q
rr
Reverse recovery charge
CONDITIONS
MIN.
-
TYP.
-
MAX.
21
UNIT
A
-
-
-
-
-
84
1.2
-
-
A
V
ns
μ
C
I
F
= 19.7 A; V
GS
= 0 V
I
F
= 19.7 A; -dI
F
/dt = 100 A/
μ
s;
V
GS
= -10 V; V
R
= 30 V
0.95
32
0.12
December 1997
2
Rev 1.100
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PHP21N06LT 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHP21N06LT,127 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHP21N06LT 制造商:NXP Semiconductors 功能描述:MOSFET N TO-220AB
PHP21N06LT/B 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR UNIVERSAL MOSFET SOT
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