參數(shù)資料
型號(hào): PHP130N03LT
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: TrenchMOS transistor Logic level FET
中文描述: 75 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, TO-220AB, 3 PIN
文件頁(yè)數(shù): 5/6頁(yè)
文件大?。?/td> 51K
代理商: PHP130N03LT
Philips Semiconductors
Product specification
TrenchMOS
transistor
Logic level FET
PHP130N03LT, PHB130N03LT
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 C
= f(T
j
); I
D
= 25 A; V
GS
= 5 V
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 C; V
DS
= V
GS
Fig.12. Typical capacitances, C
, C
, C
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
); conditions: I
D
= 75 A; parameter V
DS
Fig.14. Typical reverse diode current.
I
F
= f(V
SDS
); conditions: V
GS
= 0 V; parameter T
j
-100
0
100
200
0
0.5
1
1.5
2
30V TrenchMOS
Tj / C
a
150
50
-50
0.1
1
10
100
100
1000
10000
9506-30
VDS / V
C / pF
Ciss
Coss
Crss
BUK959-60
-100
-50
0
50
100
150
200
0
0.5
1
1.5
2
2.5
Tj / C
VGS(TO) / V
max.
typ.
min.
0
20
40
60
80
100
0
1
2
3
4
5
9506-30
QG / nC
VGS / V
VDS / V = 6
24
0
0.5
1
1.5
2
2.5
3
1E-05
1E-05
1E-04
1E-03
1E-02
1E-01
Sub-Threshold Conduction
2%
typ
98%
0
0.5
1
1.5
2
0
20
40
60
80
100
9506-30
VSDS / V
IF / A
Tj / C = 175
25
January 1998
5
Rev 1.300
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