- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄382392 > PHN205 (NXP SEMICONDUCTORS) Dual N-channel enhancement mode MOS transistor PDF資料下載
參數(shù)資料
| 型號(hào)： | PHN205 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Dual N-channel enhancement mode MOS transistor |
| 中文描述： | 6400 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SO-8 |
| 文件頁數(shù)： | 10/12頁 |
| 文件大?。?/td> | 88K |
| 代理商： | PHN205 |
1997 Oct 22
10
Philips Semiconductors
Product specification
Dual N-channel enhancement mode
MOS transistor
PHN205
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PHP119NQ06T | N-channel TrenchMOS standard level FET |
| PHB119NQ06T | N-channel TrenchMOS standard level FET |
| PHP130N03LT | TrenchMOS transistor Logic level FET |
| PHP152NQ03LT | TrenchMOS logic level FET |
| PHP152NQ03LTA | N-channel TrenchMOS logic level FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PHN210 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Dual N-channel enhancement mode TrenchMOS transistor |
| PHN210 /T3 | 功能描述:MOSFET TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHN210,118 | 功能描述:MOSFET TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHN210T | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Dual N-channel enhancement mode |
| PHN210T /T3 | 功能描述:MOSFET TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。