參數(shù)資料
型號： PHC20306
廠商： NXP SEMICONDUCTORS
元件分類： 小信號晶體管
英文描述： Complementary enhancement mode MOS transistor
中文描述： 8200 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA
封裝： PLASTIC, SOT96-1, SO-8
文件頁數(shù)： 4/8頁
文件大?。?/td> 55K
代理商： PHC20306
1998 Feb 18
4
Philips Semiconductors
Objective specification
Complementary enhancement
mode MOS transistor
PHC20306
THERMAL CHARACTERISTICS
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
20
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per channel
V
(BR)DSS
drain-source breakdown voltage
N-channel
P-channel
gate-source threshold voltage
N-channel
P-channel
drain-source leakage current
N-channel
P-channel
gate leakage current
N-channel
P-channel
drain-source on-state resistance
N-channel
V
GS
= 0; I
D
= 10
μ
A
V
GS
= 0; I
D
=
10
μ
A
30
30
V
V
V
GSth
V
GS
= V
DS
; I
D
= 1 mA
V
GS
= V
DS
; I
D
=
1 mA
1
1
V
V
I
DSS
V
GS
= 0; V
DS
= 24 V
V
GS
= 0; V
DS
=
24 V
V
GS
=
±
20 V; V
DS
= 0
100
100
nA
nA
I
GSS
±
100
±
100
nA
nA
R
DSon
V
GS
= 4.5 V; I
D
= 2 A
V
GS
= 10 V; I
D
= 4 A
V
GS
=
4.5 V; I
D
=
1.4 A
V
GS
=
10 V; I
D
=
2.8 A
45
30
100
65
m
m
m
m
P-channel
C
iss
input capacitance
N-channel
P-channel
output capacitance
N-channel
P-channel
reverse transfer capacitance
N-channel
P-channel
total gate charge
N-channel
P-channel
gate-source charge
N-channel
P-channel
V
GS
= 0; V
DS
= 24 V; f = 1 MHz
V
GS
= 0; V
DS
=
24 V; f = 1 MHz
700
tbf
850
tbf
pF
pF
C
oss
V
GS
= 0; V
DS
= 24 V; f = 1 MHz
V
GS
= 0; V
DS
=
24 V; f = 1 MHz
260
tbf
320
tbf
pF
pF
C
rss
V
GS
= 0; V
DS
= 24 V; f = 1 MHz
V
GS
= 0; V
DS
=
24 V; f = 1 MHz
110
tbf
135
tbf
pF
pF
Q
G
V
GS
= 10 V; V
DD
= 15 V; I
D
= 4 A
V
GS
=
10 V; V
DD
=
15 V; I
D
=
2.8 A
16
tbf
30
tbf
nC
nC
Q
GS
V
DD
= 15 V; I
D
= 4 A
V
DD
=
15 V; I
D
=
2.8 A
2
tbf
nC
nC
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PHC20512 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Complementary enhancement mode MOS transistors
PHC21025 制造商:NXP Semiconductors 功能描述:MOSFET Dual N/P-Ch 30V 3.5A/2.3A SOIC8
PHC21025 /T3 功能描述:MOSFET TAPE-7 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHC21025,118 功能描述:MOSFET TAPE-7 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHC21025118 制造商:NXP Semiconductors 功能描述:MOSFET N CH 30V 3.5A SOT96-1
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