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參數(shù)資料
| 型號： | PHB160N03T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel enhancement mode field-effect transistor |
| 中文描述： | 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁數(shù)： | 5/13頁 |
| 文件大?。?/td> | 271K |
| 代理商： | PHB160N03T |
Philips Semiconductors
PHB160N03T
N-channel enhancement mode field-effect transistor
Product specification
Rev. 01 — 13 September 2000
5 of 13
9397 750 07325
Philips Electronics N.V. 2000. All rights reserved.
8.
Characteristics
Table 5:
T
j
= 25
°
C unless otherwise specified
Symbol
Parameter
Static characteristics
V
(BR)DSS
drain-source breakdown
voltage
Characteristics
Conditions
Min
Typ
Max
Unit
I
D
= 250
μ
A; V
GS
= 0 V
T
j
= 25
°
C
T
j
=
55
°
C
30
27
V
V
V
GS(th)
gate-source threshold voltage I
D
= 1 mA; V
DS
= V
GS
;
Figure 9
T
j
= 25
°
C
T
j
= 175
°
C
T
j
=
55
°
C
V
DS
= 30 V; V
GS
= 0 V
T
j
= 25
°
C
T
j
= 175
°
C
V
GS
=
±
20 V; V
DS
= 0 V
V
GS
= 10 V; I
D
= 25 A;
Figure 7
and
8
T
j
= 25
°
C
T
j
= 175
°
C
2
1
3
4
4.4
V
V
V
I
DSS
drain-source leakage current
0.05
2
10
500
100
μ
A
μ
A
nA
I
GSS
R
DSon
gate-source leakage current
drain-source on-state
resistance
4.3
5
9.3
m
m
Dynamic characteristics
g
fs
forward transconductance
V
DS
= 25 V; I
D
= 25 A;
Figure 11
I
D
= 75 A; V
DS
= 15 V;
V
GS
= 10 V;
Figure 14
55
S
Q
g(tot)
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Source-drain diode
V
SD
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
turn-on rise time
turn-off delay time
turn-off fall time
125
19
56
4500
1500
960
35
130
155
150
6000
1800
1300
55
200
230
220
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0 V; V
DS
= 25 V;
f = 1 MHz;
Figure 12
V
DD
= 30 V; R
D
= 1.2
;
V
GS
= 10 V; R
G
= 10
source-drain (diode forward)
voltage
I
S
= 25 A; V
GS
= 0 V;
I
S
= 75 A; V
GS
= 0 V;
Figure 13
I
S
= 75 A;
dI
S
/dt =
100 A/
μ
s;
V
GS
=
10 V; V
DS
= 30 V
0.85
1.1
1.2
V
V
t
rr
Q
r
reverse recovery time
recovered charge
400
1.0
ns
μ
C
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