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參數(shù)資料
| 型號(hào)： | PHB11N50E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistors Avalanche energy rated |
| 中文描述： | 10.9 A, 500 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SOT-404, 3 PIN |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 102K |
| 代理商： | PHB11N50E |
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHB11N50E, PHW11N50E
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
); parameter T
j
Fig.8. Typical transconductance
g
fs
= f(I
D
); parameter T
j
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 C
= f(T
j
); I
D
= 5.5 A; V
GS
= 10 V
Fig.10. Gate threshold voltage
V
GS(TO)
= f(T
j
); conditions: I
D
= 0.25 mA; V
DS
= V
GS
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 C; V
DS
= V
GS
Fig.12. Typical capacitances, C
, C
, C
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
PHP11N50E
0
2
4
6
8
10
12
14
16
18
20
0
1
2
3
4
5
6
7
Gate-source voltage, VGS (V)
Drain current, ID (A)
VDS > ID X RDS(ON)
Tj = 25 C
150 C
-60
-40
-20
0
20
40
Tj / C
60
80
100
120
140
VGS(TO) / V
4
3
2
1
0
max.
typ.
min.
PHP11N50E
0
2
4
6
8
10
12
0
5
10
15
20
Drain current, ID (A)
Transconductance, gfs (S)
VDS > ID X RDS(ON)
Tj = 25 C
150 C
0
1
2
VGS / V
3
4
ID / A
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
SUB-THRESHOLD CONDUCTION
typ
2 %
98 %
-60
-40
-20
0
20
40
Tj / C
60
80
100 120 140
Normalised RDS(ON) = f(Tj)
2
1
0
a
PHP11N50E
10
100
1000
10000
0.1
1
10
100
Drain-source voltage, VDS (V)
Capacitances, Ciss, Coss, Crss (pF)
Ciss
Coss
Crss
December 1998
5
Rev 1.000
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