參數(shù)資料
型號: PH3830L
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: N-channel TrenchMOS logic level FET
中文描述: 98 A, 30 V, 0.0049 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235
封裝: PLASTIC, LFPAK-5
文件頁數(shù): 8/12頁
文件大小: 92K
代理商: PH3830L
Philips Semiconductors
PH3830L
N-channel TrenchMOS logic level FET
Product data
Rev. 03 — 2 March 2004
8 of 12
9397 750 12945
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
T
j
= 25
°
C and 150
°
C; V
GS
= 0 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
I
D
= 20 A; V
DD
= 10 V
Fig 13. Gate-source voltage as a function of gate
charge; typical values.
003aaa383
0
10
20
30
40
50
0
0.2
0.4
0.6
0.8
1
VSD (V)
IS
(A)
Tj = 150
°
C
25
°
C
003aaa384
0
2
4
6
8
10
0
20
40
60
80
QG (nC)
VGS
(V)
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PH3855L 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS logic level FET
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