參數(shù)資料
型號(hào): PH3830L
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: N-channel TrenchMOS logic level FET
中文描述: 98 A, 30 V, 0.0049 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235
封裝: PLASTIC, LFPAK-5
文件頁(yè)數(shù): 4/12頁(yè)
文件大?。?/td> 92K
代理商: PH3830L
Philips Semiconductors
PH3830L
N-channel TrenchMOS logic level FET
Product data
Rev. 03 — 2 March 2004
4 of 12
9397 750 12945
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
5.
Thermal characteristics
5.1 Transient thermal impedance
Table 4:
Symbol Parameter
R
th(j-mb)
thermal resistance from junction to mounting base
Figure 4
Thermal characteristics
Conditions
Min Typ Max Unit
-
-
2
K/W
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration.
003aaa378
10-1
1
10
10-4
10-3
10-2
10-1
1
10
tp (s)
Zth(j-mb)
(K/W)
single pulse
0.2
0.1
0.05
δ
= 0.5
0.02
tp
tp
T
T
P
t
δ
=
相關(guān)PDF資料
PDF描述
PH3855L N-channel TrenchMOS logic level FET
PH4840S N-channel TrenchMOS intermediate level FET
PH6325L N-channel TrenchMOS logic level FET
PH7030L N-channel TrenchMOS logic level FET
PHB100N03LT N-channel enhancement mode field-effect transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PH3830L,115 功能描述:MOSFET N-CH TRENCH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PH3830L 制造商:NXP Semiconductors 功能描述:MOSFET N 30V LFPAK
PH3830L115 制造商:NXP Semiconductors 功能描述:MOSFET N CH 30V 98A 4-SOT-669
PH3855L 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS logic level FET
PH3855L T/R 功能描述:MOSFET N-CH TRENCH 55V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube