參數(shù)資料
型號: PCF8583
廠商: NXP SEMICONDUCTORS
元件分類: XO, clock
英文描述: Clock/calendar with 240×8-bit RAM(帶240×8位RAM的時鐘/日歷)
中文描述: REAL TIME CLOCK
文件頁數(shù): 18/28頁
文件大?。?/td> 162K
代理商: PCF8583
1997 Jul 15
18
Philips Semiconductors
Product specification
Clock/calendar with 240
×
8-bit RAM
PCF8583
10 LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
11 HANDLING
Inputs and outputs are protected against electrostatic charge in normal handling. However, to be totally safe, it is
desirable to take normal precautions appropriate to handling MOS devices. Advice can be found in Data Handbook IC12
under “Handling MOS Devices”.
12 DC CHARACTERISTICS
V
DD
= 2.5 to 6.0 V; V
SS
= 0 V; T
amb
=
40 to +85
°
C unless otherwise specified.
SYMBOL
PARAMETER
MIN.
0.8
0.8
40
65
MAX.
UNIT
V
DD
I
DD
I
SS
V
I
I
I
I
O
P
tot
P
O
T
amb
T
stg
supply voltage (pin 8)
supply current (pin 8)
supply current (pin 4)
input voltage
DC input current
DC output current
total power dissipation per package
power dissipation per output
operating ambient temperature
storage temperature
+7.0
50
50
V
DD
+ 0.8
10
10
300
50
+85
+150
V
mA
mA
V
mA
mA
mW
mW
°
C
°
C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
(1)
MAX.
UNIT
V
DD
supply voltage
(operating mode)
I
2
C-bus active
I
2
C-bus inactive
T
amb
= 0 to 70
°
C; note 2
2.5
1.0
1.0
6.0
6.0
6.0
V
V
V
V
DDosc
supply voltage
(quartz oscillator)
supply current
(operating mode)
supply current
(clock mode)
I
DD
f
SCL
= 100 kHz; clock mode;
note 3
see Fig.20
f
SCL
= 0 Hz; V
DD
= 5 V
f
SCL
= 0 Hz; V
DD
= 1 V
f
OSCI
= 0 Hz; V
DD
= 1 V
T
amb
=
40 to + 85
°
C
T
amb
=
25 to + 70
°
C
note 4
200
μ
A
I
DDO
10
2
50
10
μ
A
μ
A
I
DDR
data retention
1.5
1.9
5
2
2.3
μ
A
μ
A
V
V
EN
I
2
C-bus enable level
SDA
V
IL
V
IH
I
OL
I
LI
C
i
LOW level input voltage
HIGH level input voltage
LOW level output current
input leakage current
input capacitance
note 5
note 5
V
OL
= 0.4 V
V
I
= V
DD
or V
SS
note 6
0.8
0.7V
DD
3
1
0.3V
DD
V
DD
+0.8 V
+1
7
V
mA
μ
A
pF
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