參數(shù)資料
型號(hào): PBSS2540M,315
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: 40 V, 0.5 A NPN low VCEsat (BISS) transistor; Package: SOT883 (SC-101); Container: Tape reel smd
中文描述: 500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: 1.0 MM X 0.6 MM, 0.5 MM HEIGHT, PLASTIC, SC-101, 3 PIN
文件頁(yè)數(shù): 5/9頁(yè)
文件大?。?/td> 68K
代理商: PBSS2540M,315
2003 Jul 22
5
Philips Semiconductors
Product specication
40 V, 0.5 A
NPN low VCEsat (BISS) transistor
PBSS2540M
handbook, halfpage
0
400
800
1200
200
600
1000
MHC082
101
1
hFE
10
IC (mA)
102
103
(1)
(2)
(3)
Fig.2
DC current gain as a function of collector
current; typical values.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 55 °C.
VCE =2V.
handbook, halfpage
200
1200
400
600
800
1000
MHC085
101
110
VBE
(mV)
IC (mA)
102
103
(1)
(2)
(3)
Fig.3
Base-emitter voltage as a function of
collector current; typical values.
(1) Tamb = 55 °C.
(2) Tamb =25 °C.
(3) Tamb = 150 °C.
VCE =2V.
handbook, halfpage
103
102
10
MHC086
101
110
VCEsat
(mV)
IC (mA)
102
103
(1)
(2)
(3)
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 55 °C.
IC/IB = 20.
handbook, halfpage
200
1200
400
600
800
1000
MHC084
101
110
VBEsat
(mV)
IC (mA)
102
103
(1)
(2)
(3)
Fig.5
Base-emitter saturation voltage as a
function of collector current; typical values.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 55 °C.
IC/IB = 20.
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