參數(shù)資料
型號： PBSS2540M,315
廠商： NXP SEMICONDUCTORS
元件分類： 小信號晶體管
英文描述： 40 V, 0.5 A NPN low VCEsat (BISS) transistor; Package: SOT883 (SC-101); Container: Tape reel smd
中文描述： 500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝： 1.0 MM X 0.6 MM, 0.5 MM HEIGHT, PLASTIC, SC-101, 3 PIN
文件頁數(shù)： 3/9頁
文件大小： 68K
代理商： PBSS2540M,315
2003 Jul 22
3
Philips Semiconductors
Product specication
40 V, 0.5 A
NPN low VCEsat (BISS) transistor
PBSS2540M
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Refer to SOT883 standard mounting conditions.
2. Device mounted on an FR4 printed-circuit board, single-sided copper, tinplated, standard footprint, with 60
m
copper strip line.
3. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
THERMAL CHARACTERISTICS
Notes
1. Refer to SOT883 standard mounting conditions.
2. Device mounted on an FR4 printed-circuit board, single-sided copper, tinplated, standard footprint, with 60
m
copper strip line.
3. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
4. Operated under pulsed conditions: duty cycle
δ≤ 20%, pulse width tp ≤ 30 ms.
Soldering
Reflow soldering is the only recommended soldering method.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
40
V
VCEO
collector-emitter voltage
open base
40
V
VEBO
emitter-base voltage
open collector
6V
IC
collector current (DC)
notes 1 and 2
500
mA
ICM
peak collector current
1A
IBM
peak base current
100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; notes 1 and 2
250
mW
Tamb ≤ 25 °C; note 1 and 3
430
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to
ambient
in free air; notes 1 and 2
500
K/W
in free air; notes 1, 3 and 4
290
K/W
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PBSS2540MB 制造商:NXP Semiconductors 功能描述:TRANS NPN 40V 0.5A SOT883B 制造商:NXP Semiconductors 功能描述:TRANS, NPN, 40V, 0.5A, SOT883B 制造商:NXP Semiconductors 功能描述:TRANS, NPN, 40V, 0.5A, SOT883B; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency Typ ft:450MHz; Power Dissipation Pd:250mW; DC Collector Current:500mA; DC Current Gain hFE:50; Operating ;RoHS Compliant: Yes
PBSS2540MB,315 功能描述:兩極晶體管 - BJT 40 V, 0.5 A NPN low VCEsat transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
PBSS301ND 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN 20V 4A SSOT-6 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, 20V, 4A, SSOT-6
PBSS301ND T/R 功能描述:兩極晶體管 - BJT NPN 20V 4A LOW SAT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
PBSS301ND,115 功能描述:兩極晶體管 - BJT NPN 20V 4A LOW SAT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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