參數(shù)資料
型號(hào): PBSS2540E,115
廠(chǎng)商: NXP SEMICONDUCTORS
元件分類(lèi): 小信號(hào)晶體管
英文描述: 40 V, 500 mA NPN low VCEsat (BISS) transistor; Package: SOT416 (SC-75); Container: Tape reel smd
中文描述: 500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: PLASTIC, SMD, SC-75, 3 PIN
文件頁(yè)數(shù): 8/11頁(yè)
文件大小: 110K
代理商: PBSS2540E,115
9397 750 15063
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 4 May 2005
6 of 11
Philips Semiconductors
PBSS2540E
40 V, 500 mA NPN low VCEsat (BISS) transistor
VCE =2V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = 55 °C
VCE =2V
(1) Tamb = 55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 3.
DC current gain as a function of collector
current; typical values
Fig 4.
Base-emitter voltage as a function of collector
current; typical values
IC/IB =20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = 55 °C
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 5.
Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 6.
Collector-emitter saturation voltage as a
function of collector current; typical values
006aaa380
200
300
100
400
500
600
hFE
0
IC (mA)
10-1
103
102
110
(1)
(2)
(3)
006aaa381
500
700
300
900
1100
VBE
(mV)
100
IC (mA)
101
103
102
110
(1)
(2)
(3)
006aaa382
IC (mA)
101
103
102
110
101
1
VCEsat
(mV)
102
(1)
(2)
(3)
006aaa383
IC (mA)
101
103
102
110
101
1
VCEsat
(mV)
102
(1)
(2)
(3)
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