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參數(shù)資料
| 型號(hào)： | PBRP123YT,215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | PNP 800 mA, 40 V BISS RET; R1 = 2.2 kOhm, R2 = 10 kOhm; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| 中文描述： | 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC, SMD, 3 PIN |
| 文件頁數(shù)： | 9/12頁 |
| 文件大?。?/td> | 114K |
| 代理商： | PBRP123YT,215 |
PBRP123YT_1
NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 17 December 2007
6 of 12
NXP Semiconductors
PBRP123YT
PNP 800 mA, 40 V BISS RET; R1 = 2.2 k
, R2 = 10 k
7.
Characteristics
[1]
Pulse test: tp ≤ 300 s; δ≤ 0.02.
Table 7.
Characteristics
Tamb =25 °C unless otherwise specied.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICBO
collector-base cut-off
current
VCB = 30 V;
IE =0A
--
100
nA
ICEO
collector-emitter cut-off
current
VCE = 30 V;
IB =0A
--
0.5
A
IEBO
emitter-base cut-off
current
VEB = 5V;
IC =0A
--
0.65
mA
hFE
DC current gain
VCE = 5V;
IC = 50 mA
190
270
-
VCE = 5V;
IC = 300 mA
[1] 230
320
-
VCE = 5V;
IC = 600 mA
[1] 190
270
-
VCEsat
collector-emitter
saturation voltage
IC = 50 mA;
IB = 2.5 mA
-
35
45
mV
IC = 200 mA;
IB = 10 mA
-
70
100
mV
IC = 500 mA;
IB = 10 mA
[1] -
200
300
mV
IC = 600 mA;
IB = 6mA
[1] -
450
750
mV
VI(off)
off-state input voltage
VCE = 5V;
IC = 100 A
0.4
0.6
1V
VI(on)
on-state input voltage
VCE = 0.3 V;
IC = 20 mA
0.5
0.8
1.4
V
R1
bias resistor 1 (input)
1.54
2.2
2.86
k
R2/R1
bias resistor ratio
4.1
4.55
5
Cc
collector capacitance
VCB = 10 V;
IE =ie =0A;
f=1MHz
-11
-
pF
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