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參數(shù)資料
| 型號： | PBRP123YT,215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | PNP 800 mA, 40 V BISS RET; R1 = 2.2 kOhm, R2 = 10 kOhm; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| 中文描述： | 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC, SMD, 3 PIN |
| 文件頁數(shù)： | 5/12頁 |
| 文件大小： | 114K |
| 代理商： | PBRP123YT,215 |
PBRP123YT_1
NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 17 December 2007
2 of 12
NXP Semiconductors
PBRP123YT
PNP 800 mA, 40 V BISS RET; R1 = 2.2 k
, R2 = 10 k
2.
Pinning information
3.
Ordering information
4.
Marking
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5.
Limiting values
Table 2.
Pinning
Pin
Description
Simplied outline
Symbol
1
input (base)
2
GND (emitter)
3
output (collector)
12
3
sym003
3
2
1
R1
R2
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PBRP123YT
-
plastic surface-mounted package; 3 leads
SOT23
Table 4.
Marking codes
Type number
Marking code[1]
PBRP123YT
*7Q
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
40
V
VCEO
collector-emitter voltage
open base
-
40
V
VEBO
emitter-base voltage
open collector
-
5V
VI
input voltage
positive
-
+5
V
negative
-
22
V
IO
output current
[1][2] -
600
mA
IORM
repetitive peak output current
tp ≤ 1 ms;
δ≤ 0.33
[3] -
800
mA
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