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參數(shù)資料
| 型號(hào)： | PBRP123YT,215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | PNP 800 mA, 40 V BISS RET; R1 = 2.2 kOhm, R2 = 10 kOhm; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| 中文描述： | 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC, SMD, 3 PIN |
| 文件頁(yè)數(shù)： | 6/12頁(yè) |
| 文件大?。?/td> | 114K |
| 代理商： | PBRP123YT,215 |
PBRP123YT_1
NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 17 December 2007
3 of 12
NXP Semiconductors
PBRP123YT
PNP 800 mA, 40 V BISS RET; R1 = 2.2 k
, R2 = 10 k
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[2]
Device mounted on a ceramic PCB, Al2O3, standard footprint.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Ptot
total power dissipation
Tamb ≤ 25 °C
[3] -
250
mW
[1] -
370
mW
[2] -
570
mW
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
55
+150
°C
Tstg
storage temperature
65
+150
°C
(1) Ceramic PCB, Al2O3 standard footprint
(2) FR4 PCB, mounting pad for collector 1 cm2
(3) FR4 PCB, standard footprint
Fig 1.
Power derating curves for SOT23 (TO-236AB)
Table 5.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Tamb (°C)
75
175
125
25
75
25
006aaa998
200
400
600
Ptot
(mW)
0
(1)
(2)
(3)
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