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參數(shù)資料
| 型號： | P0120004P |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | 1.5W GaAs Power FET (Pb-Free Type) |
| 中文描述： | 1.5W GaAs功率場效應(yīng)管（無鉛型） |
| 文件頁數(shù)： | 4/13頁 |
| 文件大小： | 599K |
| 代理商： | P0120004P |
Technical Note
P0120004P
1.5W GaAs Power FET (Pb-Free Type)
SUMITOMO ELECTRIC
Ids=350mA
Ids=400mA
-100
-80
-60
-40
-20
0
20
40
60
80
-15
-10
-5
0
5
10
15
20
25
Pin (dBm)
Pout
Gain
IP3
η
add
IM3
IM3/Pout
P
G
I
I
I
η
a
-100
-80
-60
-40
-20
0
20
40
60
80
-15
-10
-5
0
5
10
15
20
25
Pin (dBm)
Pout
Gain
IP3
η
add
IM3
IM3/Pout
P
G
I
I
I
η
a
Device: P0120004P
Frequency: f1=2.1GHz, f2=2.101GHz
Bias: Vds=6V, Ids=400mA
Source Matching:Mag 0.65 Ang -156.0
°
Load Matching:Mag 0.67 Ang -140.8°
Device: P0120004P
Frequency: f1=2.1GHz, f2=2.101GHz
Bias:Vds=6V, Ids=350mA
Source Matching:Mag 0.65 Ang -156.0°
Load Matching:Mag 0.635 Ang -142.2°
[Note]
P
out
and
η
add
are measured by one signal.
The data for the figures above were measured with the load impedance matched to IP3.
Id=400mA
Pin
(dBm)
-10.0
-5.0
0.0
5.0
10.0
15.0
20.0
Pout
(dBm)
1.5
6.6
11.5
16.6
21.7
26.5
30.8
Gain
(dB)
11.5
11.6
11.5
11.6
11.7
11.5
10.8
IM3
(dBm)
-73.3
-67.2
-56.3
-40.6
-21.6
2.2
17.3
IM3/Pout
(dBc)
-74.8
-73.8
-67.8
-57.2
-43.3
-24.3
-13.5
IP3
(dBm)
38.9
43.6
45.2
45.1
43.2
38.0
34.7
Id
(mA)
406.0
402.8
396.6
384.9
367.0
381.9
455.0
η
add
(%)
0.1
0.2
0.6
1.8
6.3
18.2
40.3
Id=350mA
Pin
(dBm)
-10.0
-5.0
0.0
5.0
10.0
15.0
20.0
Pout
(dBm)
2.0
7.1
12.0
17.0
22.1
26.9
31.0
Gain
(dB)
12.0
12.1
12.0
12.0
12.1
11.9
11.0
IM3
(dBm)
-72.5
-65.7
-53.3
-38.5
-18.3
4.1
17.8
IM3/Pout
(dBc)
-74.5
-72.8
-65.3
-55.5
-40.3
-22.8
-13.2
IP3
(dBm)
39.0
43.5
44.5
44.7
42.1
37.5
34.7
Id
(mA)
356.6
353.3
346.9
336.4
319.2
339.5
412.1
η
add
(%)
0.1
0.2
0.7
2.3
7.9
22.4
46.8
Specifications and information are subject to change without notice. 2003-11
Sumitomo Electric Industries, Ltd. 1,Taya-cho, Sakae-ku, Yokohama, 244-8588 Japan
Phone: +81-45-853-7263 Fax: +81-45-853-1291 e-mail :
GaAsIC-ml@ml.sei.co.jp
-4-
Web Site:
www.sei.co.jp/GaAsIC/
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