參數(shù)資料
型號(hào): NTHD4502N
廠商: ON SEMICONDUCTOR
英文描述: Power MOSFET 30 V, 3.9 A, Dual N−Channel ChipFET
文件頁數(shù): 6/6頁
文件大?。?/td> 60K
代理商: NTHD4502N
NTHD4502N
http://onsemi.com
6
PACKAGE DIMENSIONS
B
S
C
D
G
L
A
1
2
3
4
8
7
6
5
M
J
K
1
2
3
4
8
7
6
5
DIM
A
B
C
D
G
J
K
L
M
S
MIN
2.95
1.55
1.00
0.25
MAX
3.10
1.70
1.10
0.35
MIN
0.116
0.061
0.039
0.010
MAX
0.122
0.067
0.043
0.014
INCHES
MILLIMETERS
0.65 BSC
0.10
0.28
0.55 BSC
5 NOM
0.025 BSC
0.004
0.011
0.022 BSC
5 NOM
0.072
0.20
0.42
0.008
0.017
1.80
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM
PER SIDE.
4. LEADFRAME TO MOLDED BODY OFFSET IN
HORIZONTAL AND VERTICAL SHALL NOT EXCEED
0.08 MM.
5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE
BURRS.
6. NO MOLD FLASH ALLOWED ON THE TOP AND
BOTTOM LEAD SURFACE.
7. 1206A01 AND 1206A02 OBSOLETE. NEW
STANDARD IS 1206A03.
0.05 (0.002)
2.00
0.080
ChipFET
CASE 1206A03
ISSUE E
0.457
0.018
2.032
0.08
0.635
0.025
0.66
0.026
0.711
0.028
mm
inches
SCALE 20:1
0.457
0.018
2.032
0.08
0.635
0.025
0.66
0.026
0.254
0.010
mm
inches
SCALE 20:1
1.092
0.043
0.178
0.007
Basic
Style 2
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 2:
PIN 1. SOURCE 1
2. GATE 1
3. SOURCE 2
4. GATE 2
5. DRAIN 2
6. DRAIN 2
7. DRAIN 1
8. DRAIN 1
ON Semiconductor
and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support
: 8002829855 Toll Free
USA/Canada
Japan
: ON Semiconductor, Japan Customer Focus Center
291 Kamimeguro, Meguroku, Tokyo, Japan 1530051
Phone
: 81357733850
NTHD4502N/D
ChipFET is a trademark of Vishay Siliconix.
LITERATURE FULFILLMENT
:
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 850821312 USA
Phone
: 4808297710 or 8003443860 Toll Free USA/Canada
Fax
: 4808297709 or 8003443867
Toll Free USA/Canada
Email
: orderlit@onsemi.com
ON Semiconductor Website
: http://onsemi.com
Order Literature
: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
相關(guān)PDF資料
PDF描述
NTHD4502NT1 Power MOSFET 30 V, 3.9 A, Dual N−Channel ChipFET
NTHD4502NT1G Power MOSFET 30 V, 3.9 A, Dual N−Channel ChipFET
NTHD4508N Power MOSFET 20 V, 4.1 A, Dual N−Channel ChipFET
NTHD4508NT1 Power MOSFET 20 V, 4.1 A, Dual N−Channel ChipFET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTHD4502NT1 功能描述:MOSFET 30V 3.9A Dual RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTHD4502NT1G 功能描述:MOSFET 30V 3.9A Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTHD4508N 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 20 V, 4.1 A, Dual N−Channel ChipFET
NTHD4508NT1 功能描述:MOSFET 20V 4.1A Dual RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTHD4508NT1G 功能描述:MOSFET 20V 4.1A Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube