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參數(shù)資料
| 型號(hào)： | NTHD4502N |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 30 V, 3.9 A, Dual N−Channel ChipFET |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 60K |
| 代理商： | NTHD4502N |
NTHD4502N
http://onsemi.com
2
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
JunctiontoAmbient – Steady State (Note 4)
R
JA
110
°
C/W
JunctiontoAmbient – t
≤
5 s (Note 4)
R
JA
60
JunctiontoAmbient – Steady State (Note 5)
R
JA
195
4. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
5. Surface Mounted on FR4 Board using the minimum recommended pad size (Cu area = 0.214 in sq).
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 A
30
36
V
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V, V
DS
= 24 V
1.0
A
V
GS
= 0 V, V
DS
= 24 V, T
J
= 125
°
C
10
GatetoSource Leakage Current
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
ON CHARACTERISTICS
(Note 6)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 A
1.0
1.65
3.0
V
DraintoSource OnResistance
R
DS(on)
V
GS
= 10 V, I
D
= 2.9 A
78
85
m
V
GS
= 4.5 V, I
D
= 2.2 A
105
140
Forward Transconductance
g
FS
V
DS
= 15 V, I
D
= 2.9 A
3.8
S
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
140
pF
Output Capacitance
C
OSS
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 15 V
53
Reverse Transfer Capacitance
C
RSS
16
Input Capacitance
C
ISS
135
250
pF
Output Capacitance
C
OSS
V
GS
= 0 V, f = 1.0 MHz,
V
= 24 V
DS
42
75
Reverse Transfer Capacitance
C
RSS
13
25
Total Gate Charge
Q
G(TOT)
3.6
7.0
nC
Threshold Gate Charge
Q
G(TH)
V
GS
= 10 V, V
= 15 V,
I
D
= 2.9 A
0.3
GatetoSource Charge
Q
GS
0.6
GatetoDrain Charge
Q
GD
0.7
Total Gate Charge
Q
G(TOT)
1.9
nC
Threshold Gate Charge
Q
G(TH)
V
GS
= 4.5 V, V
DS
= 24 V,
I
D
= 2.9 A
0.3
GatetoSource Charge
Q
GS
0.6
GatetoDrain Charge
Q
GD
0.9
6. Pulse Test: Pulse Width
300 s, Duty Cycle
2%.
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| NTHD4502NT1 | Power MOSFET 30 V, 3.9 A, Dual N−Channel ChipFET |
| NTHD4502NT1G | Power MOSFET 30 V, 3.9 A, Dual N−Channel ChipFET |
| NTHD4508N | Power MOSFET 20 V, 4.1 A, Dual N−Channel ChipFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTHD4502NT1 | 功能描述:MOSFET 30V 3.9A Dual RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTHD4502NT1G | 功能描述:MOSFET 30V 3.9A Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTHD4508N | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 20 V, 4.1 A, Dual N−Channel ChipFET |
| NTHD4508NT1 | 功能描述:MOSFET 20V 4.1A Dual RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTHD4508NT1G | 功能描述:MOSFET 20V 4.1A Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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