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參數(shù)資料
| 型號： | NP40N055KHE-E1-AY |
| 元件分類： | JFETs |
| 英文描述： | 40 A, 55 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | LEAD FREE, MP-25ZK, TO-263, 3 PIN |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 206K |
| 代理商： | NP40N055KHE-E1-AY |
Data Sheet D14092EJ6V0DS
3
NP40N055EHE, NP40N055KHE, NP40N055CHE, NP40N055DHE, NP40N055MHE, NP40N055NHE
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain to Source On-state Resistance
RDS(on)
VGS = 10 V, ID = 20 A
18
23
m
Ω
Gate to Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250
μA
2.0
3.0
4.0
V
Forward Transfer Admittance
| yfs |
VDS = 10 V, ID = 20 A
7
14
S
Drain Leakage Current
IDSS
VDS = 55 V, VGS = 0 V
10
μA
Gate to Source Leakage Current
IGSS
VGS =
±20 V, VDS = 0 V
±10
μA
Input Capacitance
Ciss
1070
1610
pF
Output Capacitance
Coss
190
280
pF
Reverse Transfer Capacitance
Crss
VDS = 25 V,
VGS = 0 V,
f = 1 MHz
95
180
pF
Turn-on Delay Time
td(on)
16
35
ns
Rise Time
tr
9.2
23
ns
Turn-off Delay Time
td(off)
29
57
ns
Fall Time
tf
ID = 20 A,
VGS = 10 V,
VDD = 28 V,
RG = 1
Ω
9.2
23
ns
Total Gate Charge
QG
23
35
nC
Gate to Source Charge
QGS
6
nC
Gate to Drain Charge
QGD
ID = 40 A,
VDD = 44 V,
VGS = 10 V
9
nC
Body Diode Forward Voltage
VF(S-D)
IF = 40 A, VGS = 0 V
1.0
V
Reverse Recovery Time
trr
38
ns
Reverse Recovery Charge
Qrr
IF = 40 A, VGS = 0 V,
di/dt = 100 A/
μs
46
nC
TEST CIRCUIT 3 GATE CHARGE
VGS = 20
→ 0 V
PG.
RG = 25
Ω
50
Ω
D.U.T.
L
VDD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
RG
PG.
IG = 2 mA
50
Ω
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
τ = 1 s
Duty Cycle
≤ 1 %
τ
VGS
Wave Form
VDS
Wave Form
VGS
VDS
10 %
0
90 %
VGS
VDS
ton
toff
td(on)
tr
td(off)
tf
10 %10 %
μ
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NP40N055KHE-E2-AY | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP40N055KLE | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP40N055KLE-E1-A | 制造商:Renesas Electronics Corporation 功能描述: |
| NP40N055KLE-E1-AY | 功能描述:MOSFET N-CH 55V 40A TO-263 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| NP40N055KLE-E2-AY | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
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