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參數(shù)資料
| 型號(hào)： | NP40N055KHE-E1-AY |
| 元件分類： | JFETs |
| 英文描述： | 40 A, 55 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | LEAD FREE, MP-25ZK, TO-263, 3 PIN |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 206K |
| 代理商： | NP40N055KHE-E1-AY |
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MOS FIELD EFFECT TRANSISTOR
NP40N055EHE, NP40N055KHE
NP40N055CHE, NP40N055DHE, NP40N055MHE, NP40N055NHE
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
2002, 2007
Document No. D14092EJ6V0DS00 (6th edition)
Date Published October 2007 NS
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
DESCRIPTION
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
NP40N055EHE-E1-AY
Note1, 2
NP40N055EHE-E2-AY
Note1, 2
TO-263 (MP-25ZJ) typ. 1.4 g
NP40N055KHE-E1-AY
Note1
NP40N055KHE-E2-AY
Note1
Pure Sn (Tin)
Tape 800 p/reel
TO-263 (MP-25ZK) typ. 1.5 g
NP40N055CHE-S12-AZ
Note1, 2
Sn-Ag-Cu
TO-220 (MP-25) typ. 1.9 g
NP40N055DHE-S12-AY
Note1, 2
TO-262 (MP-25 Fin Cut) typ. 1.8 g
NP40N055MHE-S18-AY
Note1
TO-220 (MP-25K) typ. 1.9 g
NP40N055NHE-S18-AY
Note1
Pure Sn (Tin)
Tube 50 p/tube
TO-262 (MP-25SK) typ. 1.8 g
Notes 1. Pb-free (This product does not contain Pb in the external electrode.)
2. Not for new design
FEATURES
Channel temperature 175 degree rated
Super low on-state resistance
RDS(on) = 23 m
Ω MAX. (VGS = 10 V, ID = 20 A)
Low input capacitance
Ciss = 1070 pF TYP.
Built-in gate protection diode
<R>
(TO-220)
(TO-262)
(TO-263)
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| NP84N075MUE-S18-AY | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP84N075NUE-S18-AY | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NP40N055KHE-E2-AY | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP40N055KLE | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP40N055KLE-E1-A | 制造商:Renesas Electronics Corporation 功能描述: |
| NP40N055KLE-E1-AY | 功能描述:MOSFET N-CH 55V 40A TO-263 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| NP40N055KLE-E2-AY | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
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