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參數(shù)資料
| 型號： | NP80N06CLD |
| 元件分類： | JFETs |
| 英文描述： | 80 A, 60 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | MP-25, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 39K |
| 代理商： | NP80N06CLD |
1998
MOS FIELD EFFECT TRANSISTOR
NP80N06CLD,NP80N06DLD,NP80N06ELD
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
PRELIMINARY PRODUCT INFORMATION
Document No.
D13793EJ2V0PM00 (2nd edition)
Date Published
January 1999 NS CP(K)
Printed in Japan
The information contained in this document is being issued in advance of the production cycle for the
device. The parameters for the device may change before final production or NEC Corporation, at its own
discretion, may withdraw the device prior to its production.
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP80N06CLD
TO-220AB
NP80N06DLD
TO-262
NP80N06ELD
TO-263
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
Channel Temperature 175 degree rated
Super Low On-state Resistance
RDS(on)1 = 13 m
(MAX.) (VGS = 10 V, ID = 40 A)
RDS(on)2 = 17 m
(MAX.) (VGS = 5 V, ID = 40 A)
Low Ciss : Ciss = 2360 pF (TYP.)
Built-in Gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID(DC)
±80
A
Drain Current (Pulse)
Note1
ID(pulse)
±210
A
Total Power Dissipation (TA = 25 °C)
PT
1.8
W
Total Power Dissipation (Tch = 25 °C)
PT
100
W
Single Avalanche Current
IAS
TBD
A
Single Avalanche Energy
Note2
EAS
TBD
mJ
Channel Temperature
Tch
175
°C
Storage Temperature
Tstg
–55 to + 175
°C
Notes 1. PW
≤ 10
s, Duty cycle ≤ 1 %
2. Starting Tch = 25 °C, RG = 25
, VGS = 20 V →0
THERMAL RESISTANCE
Channel to Case
Rth(ch-C)
1.50
°C/W
Channel to Ambient
Rth(ch-A)
83.3
°C/W
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
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| NP80N06MLG | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
| NP80N06MLG-S18-AY | 功能描述:MOSFET N-CH 60V 80A TO-220 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| NP80N06NLG | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
| NP80N06NLG-S18-AY | 功能描述:MOSFET N-CH 60V 80A TO-262 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
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