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參數(shù)資料
| 型號： | NIS3001QPT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 穩(wěn)壓器 |
| 英文描述： | Integrated Driver and MOSFET Power Chip for Synchronous Buck Controllers |
| 中文描述： | 4 A SWITCHING REGULATOR, 1000 kHz SWITCHING FREQ-MAX, BCC21 |
| 封裝： | QFN-21 |
| 文件頁數(shù)： | 4/18頁 |
| 文件大小： | 208K |
| 代理商： | NIS3001QPT1 |
NIS3001
http://onsemi.com
4
ELECTRICAL CHARACTERISTICS
(Test conditions unless otherwise noted; V
IN
= 12 V, V
S
= V
BST
= V
EN
= 5 V, F
SW
= 500 kHz, V
CO
= 4 V)
Characteristic
Symbol
Min
Typ
Max
Unit
DC OPERATING SPECIFICATIONS
Power Supply
Power Loss
V
OUT
= 1.5 V, I
OUT
= 4.5 A
V
OUT
= 1.5 V, I
OUT
= 15 A
P
LOSS
0.85
2.67
W
VS Operating Current (switching)
I
VS
19
mA
VS Quiescent Current, Shutdown, V
EN
= 0 V
I
VS
10
A
Bootstrap Operating Current (switching)
I
BST
7
10
mA
EN Input Characteristics
Enable Input Bias Current
I
EN
1
A
EN High Threshold, (Operating), V
IN
= open
V
EN
2.0
V
EN Low Threshold, (Shutdown), V
IN
= open
V
EN
0.8
V
Undervoltage Lockout
Undervoltage Lockout, Turn on, (V
CO
= V
EN
= 4 V, V
IN
= open)
UVLO
4.0
4.25
4.48
V
Undervoltage Lockout, Turn off, (V
CO
= V
EN
= 4 V, V
IN
= open)
UVLO
3.7
4.0
4.3
V
Hysteresis for Undervoltage Lockout, (V
CO
= V
EN
= 4 V, V
IN
= open)
V
hyst
275
mV
CO Input Characteristics
CO Input Bias Current, (V
IN
= open, V
CO
= 4 v)
I
CO
3
nA
CO High Threshold, V
IN
= open
V
CO
2.0
V
CO Low Threshold, V
IN
= open
V
CO
0.8
V
Thermal Shutdown
Overtemperature Trip Point
170
°
C
Hysteresis
30
°
C
AC OPERATING SPECIFICATIONS
HighSide Driver
Propagation Delay Time, TG Going High (Nonoverlap time); 50% between
BG (going low) and TG (going high) V
BST
V
DRN
= 5.0 V
tpdh
TG
45
ns
Propagation Delay Time, TG Going Low; 50% between CO (going low) and
TG (going low) V
BST
V
DRN
= 5.0 V
tpdl
TG
60
ns
Propagation Delay Time, BG Going High (Nonoverlap time); 50% between
DRN (going low) and BG (going high)
tpdh
BG
43
ns
Propagation Delay Time, BG Going Low; 50% between CO (going high) and
BG (going low)
tpdl
BG
8.0
ns
POWER MOSFET ON CHARACTERISTICS
HighSide Driver
Static DraintoSource OnResistance
(VGS = 5 V, ID = 20 A)
R
DS(on)
10.5
m
LowSide Driver
Static DraintoSource OnResistance
(VGS = 5 V, ID = 20 A)
R
DS(on)
3.19
m
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