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參數(shù)資料
| 型號： | NIS3001QPT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 穩(wěn)壓器 |
| 英文描述： | Integrated Driver and MOSFET Power Chip for Synchronous Buck Controllers |
| 中文描述： | 4 A SWITCHING REGULATOR, 1000 kHz SWITCHING FREQ-MAX, BCC21 |
| 封裝： | QFN-21 |
| 文件頁數(shù)： | 3/18頁 |
| 文件大?。?/td> | 208K |
| 代理商： | NIS3001QPT1 |
NIS3001
http://onsemi.com
3
MAXIMUM RATINGS*
Rating
Value
Unit
Operating Junction Temperature, T
J
125
°
C
Output DC Current
25
A
Package Thermal Resistance:
Junction to Ambient, R
JA
(4 layer PCB with vias, no air flow)
Junction to Ambient, R
JA
(4 layer PCB with vias, 200lfm air flow)
Junction to PCB, R
JPCB
(4 layer PCB with vias)
26
13
8.0
°
C/W
Storage Temperature Range, T
S
65 to 150
°
C
ESD Susceptibility (Human Body Model)
500
V
Lead Temperature Soldering:
Reflow: (SMD styles only) (Note 1)
230 peak
°
C
JEDEC Moisture Sensitivity Level
3
MSL
Pin Symbol
Pin Name
MAX
MIN
I
SOURCE
I
SINK
VS
Driver Supply Voltage
6.3 V
0.3 V
NA
4.0 A Peak (< 100 s)
250 mA DC
BST
Bootstrap Supply Voltage
Input
25 V wrt/PGND
6.3 V wrt/DRN
0.3 V wrt/DRN
NA
4.0 A Peak (< 100 s)
250 mA DC
DRN
Switching Node
(Bootstrap Supply Return)
25 V
1.0 V DC
5.0 V for 20 ns
6.0 V for 20 ns
4.0 A Peak (< 100 s)
250 mA DC
NA
TG
High Side Driver Output
(Top Gate)
25 V wrt/PGND
6.3 V wrt/DRN
0.3 V wrt/DRN
4.0 A Peak (< 100 s)
250 mA DC
4.0 A Peak (< 100 s)
250 mA DC
BG
Low Side Driver Output
(Bottom Gate)
6.3 V
0.3 V
4.0 A Peak (< 100 s)
250 mA DC
4.0 A Peak (< 100 s)
250 mA DC
CO
TG & BG Control Input
6.3 V
0.3 V
1.0 mA
1.0 mA
EN
Enable Input
6.3 V
0.3 V
1.0 mA
1.0 mA
PGND
Ground
0 V
0 V
4.0 A Peak (< 100 s)
250 mA DC
NA
VIN
Input Supply Voltage
14 V
NOTE:
1. 60 seconds maximum above 183
°
C.
*The maximum package power dissipation must be observed.
All voltages are with respect to PGND except where noted.
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