- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄361111 > NE4210M01-T1 (NEC Corp.) C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET PDF資料下載
參數(shù)資料
| 型號： | NE4210M01-T1 |
| 廠商： | NEC Corp. |
| 英文描述： | C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| 中文描述： | C到Ku波段超低噪聲放大器N溝道黃建忠場效應(yīng)管 |
| 文件頁數(shù)： | 9/12頁 |
| 文件大?。?/td> | 79K |
| 代理商： | NE4210M01-T1 |
Preliminary Data Shee
9
NE4210M01
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered under the following recommended conditions. For soldering methods and
conditions other than those recommended below, contact your NEC sales representative.
Soldering Metod
Soldering Conditions
Recommended
Condtion Symbol
Infrared Reflow
Package peak temperature: 230
°
C or below
Time: 30 seconds or less (at 210
°
C)
Count: 2, Exposure limit
Note
: None
IR30-00-2
VPS
Package peak temperature: 215
°
C or below
Time: 40 seconds or less (at 200
°
C)
Count: 2, Exposure limit
Note
: None
VP15-00-2
Wave Soldering
Soldering bath temperature: 260
°
C or below
Time: 10 seconds or less
Count: 1, Exposure limit
Note
: None
WS60-00-1
Partial Heating
Pin temperature: 230
°
C
Time: 10 seconds or less (per pin row)
Exposure limit
Note
: None
–
Note
After opening the dry pack, keep it in a place below 25
°
C and 65 % RH for the allowable storage period.
Caution
Do not use different soldering methods together (except for partial heating).
PRECAUTION
Avoid high static voltage and electric fields, because this device is Hetero Junction field
effect transistor with shottky barrier gate.
For more details, refer to our document “
SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL
”
(C10535E)
.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NE42484A | NONLINEAR MODEL |
| NE46100 | NECs NPN MEDIUM POWER MICROWAVE TRANSISTOR |
| NE46134 | NECs NPN MEDIUM POWER MICROWAVE TRANSISTOR |
| NE46134-T1 | NECs NPN MEDIUM POWER MICROWAVE TRANSISTOR |
| NE52118 | L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE4210S01 | 功能描述:射頻GaAs晶體管 Super Lo Noise HJFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| NE4210S01-A | 功能描述:射頻GaAs晶體管 Super Lo Noise HJFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| NE4210S01-T1 | 制造商:Renesas Electronics Corporation 功能描述: |
| NE4210S01T1B | 制造商:California Eastern Laboratories (CEL) 功能描述:Trans JFET 4V 70mA 4-Pin Case S01 T/R 制造商:California Eastern Laboratories (CEL) 功能描述:Trans JFET 4V 70mA AlGaAs HJFET 4-Pin Case S01 T/R |
| NE4210S01-T1B | 功能描述:射頻GaAs晶體管 Super Lo Noise HJFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。