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參數(shù)資料
| 型號： | NE321000 |
| 廠商： | NEC Corp. |
| 英文描述： | Low Noise Amplifier N-Channel HJ-FET(低噪聲N溝道結(jié)型場效應管) |
| 中文描述： | 低噪聲放大器N溝道黃建忠場效應管（低噪聲?溝道結(jié)型場效應管） |
| 文件頁數(shù)： | 8/12頁 |
| 文件大小： | 48K |
| 代理商： | NE321000 |
Data Sheet P14270EJ2V0DS00
8
NE321000
CHIP HANDLING
DIE ATTACHMENT
Die attach operation can be accomplished with Au-Sn (within a 300
°
C
10 s) performs in a forming gas
environment.
Epoxy die attach is not recommend.
BONDING
Bonding wires should be minimum length, semi hard gold wire (3 to 8 % elongation) 20 microns in diameter.
Bonding should be performed with a wedge tip that has a taper of approximately 15 %. Bonding time should be
kept to minimum.
As a general rule, the bonding operation should be kept within a 280
°
C, 2 minutes for all bonding wires.
If longer periods are required, the temperature should be lowered.
PRECAUTION
The user must operate in a clean, dry environment. The chip channel is glassivated for mechanical protection
only and does not preclude the necessity of a clean environment.
The bonding equipment should be periodically checked for sources of surge voltage and should be properly
grounded at all times. In fact, all test and handling equipment should be grounded to minimize the possibilities of
static discharge.
Avoid high static voltage and electric fields, because this device is Hetero Junction field effect transistor with
shottky barrier gate.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NE321000- | TRANSISTOR | JFET | N-CHANNEL | 4V V(BR)DSS | 15MA I(DSS) | CHIP |
| NE32400 | C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP |
| NE24200 | C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP |
| NE32484A-T1 | KJ 55C 55#22 SKT PLUG |
| NE32484A | C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE321000- | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | JFET | N-CHANNEL | 4V V(BR)DSS | 15MA I(DSS) | CHIP |
| NE321000_01 | 制造商:CEL 制造商全稱:CEL 功能描述:ULTRA LOW NOISE PSEUDOMORPHIC HJ FET |
| NE3210S01 | 功能描述:射頻GaAs晶體管 Super Lo Noise HJFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| NE3210S01-A | 功能描述:MOSFET Super Lo Noise HJFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NE3210S01-T1 | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:RF SMALL SIGNAL TRANSISTOR HFET |
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