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| 型號： | NCP1605DR2G |
| 廠商： | ON Semiconductor |
| 文件頁數(shù)： | 22/32頁 |
| 文件大?。?/td> | 745K |
| 描述： | IC PFC CONTROLLER CCM/DCM 16SOIC |
| 標(biāo)準(zhǔn)包裝： | 1 |
| 系列： | Soft-Skip™ |
| 模式： | 臨界傳導(dǎo)（CRM），間歇導(dǎo)電（DCM） |
| 頻率 - 開關(guān)： | 250kHz |
| 電流 - 啟動： | 12mA |
| 電源電壓： | 10 V ~ 20 V |
| 工作溫度： | 0°C ~ 125°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 16-SOIC（0.154"，3.90mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 16-SOIC |
| 包裝： | 標(biāo)準(zhǔn)包裝 |
| 其它名稱： | NCP1605DR2GOSDKR |
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NCP1605, NCP1605A, NCP1605B
http://onsemi.com
22
(I
COIL
)zcd +
R
OCP
R
pin6
@ R
CS
100 mV +
100 mV
R
pin6
@ 250 mA
@ (I
COIL
)
MAX
+
400 W
R
pin6
@ (I
COIL
)
MAX
Figure 60. Current Sense Block
5
Current Mirror
Ics
Ics
EMI
Filter
L1
D1
Vout
M1
Icoil
Icoil
DRV
10
100 mV
OCP
(RESET of the PWM latch)
Rzcd
6
R
Q
S
LdT
ZCD
outON
DT
I
cs
> 250 mA e OCP
Vzcd
Vcc
output
buffer
Rdrv
The CS block performs the overcurrent protection and the zero current detection.
R
sense
R
ocp
C
in
V
in
V
dd
CS
in
V
dd
CS
out
-
+
C
bulk
LOAD
The propagation delay (V
Pin6
lower than 100 mV) to (drive
output high) is in the range of 300 ns, typically.
The Zero Current Detection:
" Is used to detect the deadtime sequences ( DT high)
and hence, to process (V
TON
) from the error amplifier
output (V
CONTROL
). In other words, this is an input of
the ontime modulation block.
" Prevents the MOSFET from turning on as long as the
DT and ZCD signals are low. This is the case as
long as some current flows through the coil. This
delaying action on the output stage tends to make the
MOSFET turn on at the valley. To further optimize the
valley switching, one can apply the voltage of an
auxiliary winding to Pin 6 (CS
OUT
). The voltage is
compared to an internal 100 mV reference, so that
ZCD turns high only if (V
Pin6
< 100 mV).
Remarks:
" A resistor can be placed between Pin 6 and ground to
increase the ZCD precision.
" It is worth highlighting that the circuit permanently
senses the coil current and that it prevents any turn on
of the power switch as long as the core is not reset.
This feature protects the MOSFET from the possible
excessive stress it could suffer from, if it was allowed
to turn on while a huge current flows through the coil.
In particular, this scheme effectively protects the PFC
stage during the startup phase when huge inrush
currents charge the output capacitor.
" In addition this detection method does not require any
auxiliary winding. A simple coil can then be used in
the PFC stage.
It is recommended to:
1. Keep R
OCP
equal to or lower than 5 kW
2. Choose R
ZCD
as high as possible but not bigger
than (3 x R
OCP
). This is to avoid that the Pin 6
leakage prevents a proper zero current detection.
For instance, if R
OCP
is 2.2 kW, R
ZCD
should not
exceed 6.6 kW.
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