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參數(shù)資料
| 型號： | NAND512W4M5CZC5E |
| 廠商： | 意法半導體 |
| 元件分類： | 存儲器模塊 |
| 英文描述： | 256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP |
| 中文描述： | 同一封裝內整合了256/512Mb/1Gb（x8/x16，1.8/3V，528字節(jié)頁）NAND閃存以及256/512Mb（x16/x32，1.8V的）LPSDRAM的MCP |
| 文件頁數(shù)： | 22/23頁 |
| 文件大?。?/td> | 181K |
| 代理商： | NAND512W4M5CZC5E |
Revision history
NAND256-M, NAND512-M, NAND01G-M
22/23
5
Revision history
Table 11.
Document Revision History
Date
Version
Revision Details
06-Feb-2006
1.0
First Issue.
09-Feb-2006
2.0
Reference M65KG256AD changed to M65KG256AB.
07-Apr-2006
3
Part numbers NAND512R4M3 and NAND512R4M5 added,
corresponding to 1 die of 512 Mb (x16) NAND Flash + 1 die of 256 Mb or
512 Mb (x16) DDR LPSDRAM.
23-May-2006
4
Temperature range -25 to 85°C removed for 512 Mbit LPSDRAMs.
NAND512W3M2 part number added in
Table 1: Product List
.
Figure 5: TFBGA149 Connections (Top view through package)
updated.
LPSDRAM supply voltage changed to 1.7 to 1.9V.
24-Aug-2006
5
1 Gbit (x8) 3V NAND Flash memory and 512Mbit SDR (x32) 1.8V,
133MHz LPSDRAM added for NAND01GW3M2.
TFBGA137 package added.
相關PDF資料 |
PDF描述 |
|---|---|
| NAND512R4M2CZB5E | 256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP |
| NAND512W3M5BZB5F | 256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP |
| NAS-xxx | SEMI-PRECISION POWER WIREWOUND RESISTOR |
| NASxxx | SEMI-PRECISION POWER WIREWOUND RESISTOR |
| NAS1581 | 100 DEG FRUSH REDUCED HEAD BOLT |
相關代理商/技術參數(shù) |
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| NAND98R3M0CZBB5E | 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays |
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| NAND98R3M0DZBB5E | 制造商:Micron Technology Inc 功能描述:NUMNAND98R3M0DZBB5E 512+256MB NAND MCP 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays |
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