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參數(shù)資料
| 型號： | NAND512W4M5CZC5E |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | 存儲(chǔ)器模塊 |
| 英文描述： | 256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP |
| 中文描述： | 同一封裝內(nèi)整合了256/512Mb/1Gb（x8/x16，1.8/3V，528字節(jié)頁）NAND閃存以及256/512Mb（x16/x32，1.8V的）LPSDRAM的MCP |
| 文件頁數(shù)： | 16/23頁 |
| 文件大小： | 181K |
| 代理商： | NAND512W4M5CZC5E |
Maximum rating
NAND256-M, NAND512-M, NAND01G-M
16/23
2
Maximum rating
Stressing the device above the rating listed in the Absolute Maximum Ratings table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
Program and other relevant quality documents.
Table 5.
Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
Min
Max
T
A
Ambient Operating Temperature
-30
85
°C
T
BIAS
Temperature Under Bias
TBD
(1)
1.
TBD stands for To Be Defined.
TBD
(1)
°C
T
STG
Storage Temperature
-55
125
°C
V
IO(2)
2.
Minimum Voltage may undershoot to -2V for less than 20ns during transitions on input and I/O pins.
Maximum voltage may overshoot to V
DD
+ 2V for less than 20ns during transitions on I/O pins.
NAND Flash Input or Output
Voltage
1.8V device
-0.6
2.7
V
3V device
-0.6
4.6
V
LPSDRAM Input or Output
Voltage
1.8V device
-0.5
2.6
V
V
DDF
NAND Flash Supply Voltage
1.8V device
-0.6
2.7
V
3V device
-0.6
4.6
V
V
DDD
, V
DDQD
LPSDRAM Supply Voltage
1.8V device
-0.5
2.6
V
LPSDRAM Short
Circuit Output
Current
I
OS
50
mA
LPSDRAM Power
Dissipation
PD
1.0
W
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