參數(shù)資料
型號(hào)： NAND512W4A0BZB1E
廠商： NUMONYX
元件分類： PROM
英文描述： 32M X 16 FLASH 3V PROM, 35 ns, PBGA55
封裝： 8 X 10 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-55
文件頁(yè)數(shù)： 14/57頁(yè)
文件大?。?/td> 916K
代理商： NAND512W4A0BZB1E
21/57
NAND128-A, NAND256-A, NAND512-A, NAND01G-A
Figure 12. Pointer Operations for Programming
ai07591
I/O
Address
Inputs
Data Input
10h
80h
Areas A, B, C can be programmed depending on how much data is input. Subsequent 00h commands can be omitted.
AREA A
00h
Address
Inputs
Data Input
10h
80h
00h
I/O
Address
Inputs
Data Input
10h
80h
Areas B, C can be programmed depending on how much data is input. The 01h command must be re-issued before each program.
AREA B
01h
Address
Inputs
Data Input
10h
80h
01h
I/O
Address
Inputs
Data Input
10h
80h
Only Areas C can be programmed. Subsequent 50h commands can be omitted.
AREA C
50h
Address
Inputs
Data Input
10h
80h
50h
相關(guān)PDF資料
PDF描述
NAND512R3A0CV1F 64M X 8 FLASH 1.8V PROM, 35 ns, PDSO48
NAND512R3A0AN6E 64M X 8 FLASH 1.8V PROM, 35 ns, PDSO48
NAND512R3A0AZA6E 64M X 8 FLASH 1.8V PROM, 35 ns, PBGA63
NAND512R3A2AN6T 64M X 8 FLASH 1.8V PROM, 35 ns, PDSO48
NAND512R3A2CN1F 64M X 8 FLASH 1.8V PROM, 35 ns, PDSO48
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