參數(shù)資料
型號： NAND512R3B3BZA6E
廠商： STMICROELECTRONICS
元件分類： PROM
英文描述： 64M X 8 FLASH 1.8V PROM, 35 ns, PBGA63
封裝： 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, VFBGA-63
文件頁數(shù)： 10/59頁
文件大?。?/td> 998K
代理商： NAND512R3B3BZA6E
NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B
18/59
COMMAND SET
All bus write operations to the device are interpret-
ed by the Command Interface. The Commands
are input on I/O0-I/O7 and are latched on the rising
edge of Write Enable when the Command Latch
Enable signal is high. Device operations are se-
lected by writing specific commands to the Com-
mand
Register.
The
two-step
command
sequences for program and erase operations are
imposed to maximize data security.
The
Commands
are
summarized
in
Table 10. Commands
Note: 1. The bus cycles are only shown for issuing the codes. The cycles required to input the addresses or input/output data are not shown.
2. For consecutive read operations the 00h command does not need to be repeated.
3. Only during Cache Read busy.
Command
Bus Write Operations(1)
Commands
accepted
during busy
1st CYCLE
2nd CYCLE
3rd CYCLE
4th CYCLE
Read
00h(2)
30h
–
Random Data Output
05h
E0h
–
Cache Read
00h
31h
–
Exit Cache Read
34h
–
Yes(5)
Page Program
(Sequential Input default)
80h
10h
–
Random Data Input
85h
–
Copy Back Program
00h
35h
85h
10h
Cache Program
80h
15h
–
Block Erase
60h
D0h
–
Reset
FFh
–
Yes
Read Electronic Signature
90h
–
Read Status Register
70h
–
Yes
Read Block Lock Status
7Ah
–
Blocks Unlock
23h
24h
–
Blocks Lock
2Ah
–
Blocks Lock-Down
2Ch
–
相關(guān)PDF資料
PDF描述
NAND512W3B3BN6E 64M X 8 FLASH 3V PROM, 35 ns, PDSO48
NAND512W3B3BZA6E 64M X 8 FLASH 3V PROM, 35 ns, PBGA63
NAND512W3B3AN1 64M X 8 FLASH 3V PROM, 35 ns, PDSO48
NAND512W3B3BN1F 64M X 8 FLASH 3V PROM, 35 ns, PDSO48
NAND04GR4B3AN1 256M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
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NAND512R4A2DDI6 制造商:Micron Technology Inc 功能描述:NAND - Gel-pak, waffle pack, wafer, diced wafer on film
NAND512W3A0AN6 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
NAND512W3A0AN6E 功能描述:閃存 2.7-3.6V 512M(64Mx8) RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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