參數(shù)資料
型號(hào)： NAND512R3A2CV6E
廠商： STMICROELECTRONICS
元件分類： PROM
英文描述： 64M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48
封裝： 12 X 17 MM, 0.65 MM HEIGHT, ROHS COMPLIANT, PLASTIC, USOP-48
文件頁數(shù)： 10/56頁
文件大小： 951K
代理商： NAND512R3A2CV6E
NAND128-A, NAND256-A, NAND512-A, NAND01G-A
18/56
Table 6. Address Insertion, x8 Devices
Note: 1. A8 is set Low or High by the 00h or 01h Command, see Pointer Operations section.
2. Any additional address input cycles will be ignored.
3. The 4th cycle is only required for 512Mb and 1Gb devices.
Table 7. Address Insertion, x16 Devices
Note: 1. A8 is Don’t Care in x16 devices.
2. Any additional address input cycles will be ignored.
3. The 01h Command is not used in x16 devices.
4. The 4th cycle is only required for 512Mb and 1Gb devices.
Table 8. Address Definitions
Bus Cycle
I/O7
I/O6
I/O5
I/O4
I/O3
I/O2
I/O1
I/O0
1st
A7
A6
A5
A4
A3
A2
A1
A0
2nd
A16
A15
A14
A13
A12
A11
A10
A9
3rd
A24
A23
A22
A21
A20
A19
A18
A17
4th(4)
VIL
A26
A25
Bus
Cycle
I/O8-
I/O15
I/O7
I/O6
I/O5
I/O4
I/O3
I/O2
I/O1
I/O0
1st
X
A7
A6
A5
A4
A3
A2
A1
A0
2nd
X
A16
A15
A14
A13
A12
A11
A10
A9
3rd
X
A24
A23
A22
A21
A20
A19
A18
A17
4th(4)
X
VIL
A26
A25
Address
Definition
A0 - A7
Column Address
A9 - A26
Page Address
A9 - A13
Address in Block
A14 - A26
Block Address
A8
A8 is set Low or High by the 00h or 01h Command, and is
Don’t Care in x16 devices
相關(guān)PDF資料
PDF描述
NAND128W4A2CZA6E 8M X 16 FLASH 3V PROM, 35 ns, PBGA55
NAND128R4A2BZA6E 8M X 16 FLASH 1.8V PROM, 35 ns, PBGA55
NAND256R4A0DN6T 16M X 16 FLASH 1.8V PROM, 15000 ns, PDSO48
NAND256R4A2DZA1F 16M X 16 FLASH 1.8V PROM, 15000 ns, PBGA63
NAND256W3A1BZA1E 32M X 8 FLASH 3V PROM, 12000 ns, PBGA63
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NAND512R3A2CZA6E 功能描述:IC FLASH 512MBIT 63VFBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ
NAND512R3A2CZA6F 制造商:Micron Technology Inc 功能描述:SLC NAND Flash Parallel 1.8V 512Mbit 64M x 8bit 15us 63-Pin VFBGA T/R
NAND512R3A2DDI6 制造商:Micron Technology Inc 功能描述:NAND - Gel-pak, waffle pack, wafer, diced wafer on film
NAND512R3A2DZA6E 功能描述:IC FLASH 512MBIT 63VFBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.173"，4.40mm 寬） 供應(yīng)商設(shè)備封裝:8-MFP 包裝:帶卷 (TR)
NAND512R3A2SE06 制造商:Micron Technology Inc 功能描述:NAND - Gel-pak, waffle pack, wafer, diced wafer on film
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