參數(shù)資料
型號: NAND02GW3B3CN6
廠商: STMICROELECTRONICS
元件分類: PROM
英文描述: 256M X 8 FLASH 3V PROM, 35 ns, PDSO48
封裝: 12 X 20 MM, PLASTIC, TSOP-48
文件頁數(shù): 18/59頁
文件大?。?/td> 998K
代理商: NAND02GW3B3CN6
25/59
NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B
Figure 14. Copy Back Program
Figure 15. Page Copy Back Program with Random Data Input
I/O
RB
Source
Add Inputs
ai09858b
85h
Copy Back
Code
Read
Code
Read Status Register
Target
Add Inputs
tBLBH1
(Read Busy time)
Busy
tBLBH2
(Program Busy time)
00h
10h
70h
SR0
Busy
35h
I/O
RB
Source
Add Inputs
ai11001
85h
Read
Code
Target
Add Inputs
tBLBH1
(Read Busy time)
00h
Busy
35h
85h
Data
2 Cycle
Add Inputs
Data
Copy Back
Code
10h
70h
Unlimited number of repetitions
Busy
tBLBH2
(Program Busy time)
SR0
相關PDF資料
PDF描述
NAND04GR3B3BN1F 512M X 8 FLASH 1.8V PROM, 35 ns, PDSO48
NAND512W3B3BN1E 64M X 8 FLASH 3V PROM, 35 ns, PDSO48
NAND512W3B3CN6E 64M X 8 FLASH 3V PROM, 35 ns, PDSO48
NAND512W3B3CZA6E 64M X 8 FLASH 3V PROM, 35 ns, PBGA63
NAND08GR3B2CZC6T 1G X 8 FLASH 1.8V PROM, 35 ns, PBGA63
相關代理商/技術參數(shù)
參數(shù)描述
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