參數(shù)資料
型號(hào)： NAND02GW3B3CN6
廠商： STMICROELECTRONICS
元件分類(lèi)： PROM
英文描述： 256M X 8 FLASH 3V PROM, 35 ns, PDSO48
封裝： 12 X 20 MM, PLASTIC, TSOP-48
文件頁(yè)數(shù)： 10/59頁(yè)
文件大小： 998K
代理商： NAND02GW3B3CN6
NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B
18/59
COMMAND SET
All bus write operations to the device are interpret-
ed by the Command Interface. The Commands
are input on I/O0-I/O7 and are latched on the rising
edge of Write Enable when the Command Latch
Enable signal is high. Device operations are se-
lected by writing specific commands to the Com-
mand
Register.
The
two-step
command
sequences for program and erase operations are
imposed to maximize data security.
The
Commands
are
summarized
in
Table 10. Commands
Note: 1. The bus cycles are only shown for issuing the codes. The cycles required to input the addresses or input/output data are not shown.
2. For consecutive read operations the 00h command does not need to be repeated.
3. Only during Cache Read busy.
Command
Bus Write Operations(1)
Commands
accepted
during busy
1st CYCLE
2nd CYCLE
3rd CYCLE
4th CYCLE
Read
00h(2)
30h
–
Random Data Output
05h
E0h
–
Cache Read
00h
31h
–
Exit Cache Read
34h
–
Yes(5)
Page Program
(Sequential Input default)
80h
10h
–
Random Data Input
85h
–
Copy Back Program
00h
35h
85h
10h
Cache Program
80h
15h
–
Block Erase
60h
D0h
–
Reset
FFh
–
Yes
Read Electronic Signature
90h
–
Read Status Register
70h
–
Yes
Read Block Lock Status
7Ah
–
Blocks Unlock
23h
24h
–
Blocks Lock
2Ah
–
Blocks Lock-Down
2Ch
–
相關(guān)PDF資料
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NAND04GR3B3BN1F 512M X 8 FLASH 1.8V PROM, 35 ns, PDSO48
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參數(shù)描述
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NAND04GR3B2DN6E 功能描述:IC FLASH 4GBIT 48TSOP RoHS:是 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:576 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類(lèi)型:閃存 - NAND 存儲(chǔ)容量:512M（64M x 8） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤(pán) 其它名稱(chēng):497-5040
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NAND04GR3B2EN6F 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel
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