參數(shù)資料
型號(hào): NAND02GW3B3BN1F
廠商: STMICROELECTRONICS
元件分類: PROM
英文描述: 256M X 8 FLASH 3V PROM, 35 ns, PDSO48
封裝: 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
文件頁(yè)數(shù): 41/59頁(yè)
文件大?。?/td> 998K
代理商: NAND02GW3B3BN1F
NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B
46/59
Figure 27. Data Input Latch AC Waveforms
Note: Data In Last is 2112 in x8 devices and 1056 in x16 devices.
Figure 28. Sequential Data Output after Read AC Waveforms
Note: 1. CL = Low, AL = Low, W = High.
tWHCLH
CL
E
AL
W
I/O
tALLWL
tWLWL
tWLWH
tWHEH
tWLWH
Data In 0
Data In 1
Data In
Last
tDVWH
tWHDX
tDVWH
tWHDX
tDVWH
tWHDX
ai08030
(Data Setup time)
(Data Hold time)
(ALSetup time)
(CL Hold time)
(E Hold time)
E
ai08031
R
I/O
RB
tRLRL
tRLQV
tRHRL
tRLQV
Data Out
tRHQZ
tBHRL
tRLQV
tRHQZ
tEHQZ
(Read Cycle time)
(R Accesstime)
(R High Holdtime)
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NAND02GW3B3CN6 256M X 8 FLASH 3V PROM, 35 ns, PDSO48
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