參數(shù)資料
型號: NAND02GW3B3BN1F
廠商: STMICROELECTRONICS
元件分類: PROM
英文描述: 256M X 8 FLASH 3V PROM, 35 ns, PDSO48
封裝: 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
文件頁數(shù): 16/59頁
文件大?。?/td> 998K
代理商: NAND02GW3B3BN1F
23/59
NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B
Figure 13. Random Data Input During Sequential Data Input
I/O
Address
Inputs
ai08664
Data Intput
80h
Cmd
Code
Address
Inputs
Data Input
85h
5 Add cycles
Main Area
Spare
Area
Col Add 1,2
Row Add 1,2,3
Cmd
Code
2 Add cycles
Main Area
Spare
Area
Col Add 1,2
RB
Busy
tBLBH2
(Program Busy time)
SR0
10h
70h
Confirm
Code
Read Status Register
相關(guān)PDF資料
PDF描述
NAND02GW3B3CN6 256M X 8 FLASH 3V PROM, 35 ns, PDSO48
NAND04GR3B3BN1F 512M X 8 FLASH 1.8V PROM, 35 ns, PDSO48
NAND512W3B3BN1E 64M X 8 FLASH 3V PROM, 35 ns, PDSO48
NAND512W3B3CN6E 64M X 8 FLASH 3V PROM, 35 ns, PDSO48
NAND512W3B3CZA6E 64M X 8 FLASH 3V PROM, 35 ns, PBGA63
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NAND04GR3B2DDI6 制造商:Micron Technology Inc 功能描述:NAND - Gel-pak, waffle pack, wafer, diced wafer on film
NAND04GR3B2DN6E 功能描述:IC FLASH 4GBIT 48TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:576 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:512M(64M x 8) 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP(0.724",18.40mm 寬) 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 其它名稱:497-5040
NAND04GR3B2DZL6F 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel
NAND04GR3B2EN6E 制造商:Micron Technology Inc 功能描述:NAND - Trays
NAND04GR3B2EN6F 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel