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參數(shù)資料
| 型號： | N04Q1618C2BW-15C |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | SRAM |
| 英文描述： | 256K X 16 STANDARD SRAM, 150 ns, UUC |
| 封裝： | WAFER |
| 文件頁數(shù)： | 9/13頁 |
| 文件大?。?/td> | 305K |
| 代理商： | N04Q1618C2BW-15C |
Stock No. 23451-D 11/06
5
The specification is ADVANCE INFORMATION and subject to change without notice.
N04Q1618C2B
Advance Information
AMI Semiconductor, Inc.
Power Consumption (T
A = 0
oC - 70oC)
Device PN
Speed
Typ1
Max
N04Q1612C2Bx-
15C
Standby Current2
Isb
Chip Disabled
VCC = 1.3V, VIN = VCC or 0
50
500
nA
Read/Write Current3
Icc
Chip Enabled, IOUT = 0
VCC=1.3V, VIN=VIH or VIL
1us
0.4
0.5
mA
150ns
2
3
Page Mode Current
Iccp
Chip Enabled, IOUT = 0
VCC=1.3V, VIN=VIH or VIL
1us
80
100
A
150ns
300
450
N04Q1618C2Bx-
15C
Standby Current
Isb
Chip Disabled
VCC = 1.9V, VIN = VCC or 0V
50
500
nA
Read/Write Current
Icc
Chip Enabled, IOUT = 0
VCC=1.9V, VIN=VIH or VIL
1us
0.4
0.5
mA
150ns
2
3
Page Mode Current
Iccp
Chip Enabled, IOUT = 0
VCC=1.9V, VIN=VIH or VIL
1us
80
100
A
150ns
400
500
N04Q1618C2Bx-
70C/85C
Standby Current
Isb
Chip Disabled
VCC = 1.9V, VIN = VCC or 0
0.2
1.5
A
Read/Write Current
Icc
Chip Enabled, IOUT = 0
VCC=1.9V, VIN=VIH or VIL
1us
0.6
0.9
mA
70ns
85ns
67
Page Mode Current
Iccp
Chip Enabled, IOUT = 0
VCC=1.9V, VIN=VIH or VIL
1us
0.1
0.2
mA
70ns
85ns
0.8
1
1. Typical values are measured at Vcc=Vcc Typ., TA=25°C and not 100% tested.
2. This device assumes a standby mode if the chip is disabled (CE1 high or CE2 low). In order to achieve low standby current all
inputs must be within 0.2 volts of either VCC or VSS. This applies to all ISB values.
3. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive
output capacitance expected in the actual system. This applies to all Icc and Iccp values.
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