參數(shù)資料
型號(hào)： N04Q1618C2BW-15C
廠商： ON SEMICONDUCTOR
元件分類： SRAM
英文描述： 256K X 16 STANDARD SRAM, 150 ns, UUC
封裝： WAFER
文件頁數(shù)： 11/13頁
文件大小： 305K
代理商： N04Q1618C2BW-15C
Stock No. 23451-D 11/06
7
The specification is ADVANCE INFORMATION and subject to change without notice.
N04Q1618C2B
Advance Information
AMI Semiconductor, Inc.
Timing Test Conditions
Item
Input Pulse Level
0.1VCC to 0.9 VCC
Input Rise and Fall Time
5ns
Input and Output Timing Reference Levels
0.5 VCC
Output Load
CL = 30pF
Operating Temperature
0 to +70oC
Timing
Item
Symbol
-70
-85
-150
Units
Min.
Max.
Min.
Max.
Min.
Max.
Read Cycle Time
tRC
70
85
150
ns
Address Access Time
tAA
70
85
150
ns
Page Mode Address Access Time
tAAP
70
85
150
ns
Chip Enable to Valid Output
tCO
70
85
150
ns
Output Enable to Valid Output
tOE
35
45
75
ns
Byte Select to Valid Output
tBE
70
85
150
ns
Chip Enable to Low-Z output
tLZ
10
ns
Output Enable to Low-Z Output
tOLZ
555
ns
Byte Select to Low-Z Output
tBZ
10
ns
Chip Disable to High-Z Output
tHZ
020
0
20
020
ns
Output Disable to High-Z Output
tOHZ
020
0
20
020
ns
Byte Select Disable to High-Z Output
tBHZ
020
0
20
020
ns
Output Hold from Address Change
tOH
10
ns
Write Cycle Time
tWC
70
85
150
ns
Chip Enable to End of Write
tCW
50
60
120
ns
Address Valid to End of Write
tAW
50
60
120
ns
Byte Select to End of Write
tBW,
50
60
120
ns
Write Pulse Width
tWP
40
50
100
ns
Address Setup Time
tAS
000
ns
Write Recovery Time
tWR
000
ns
Write to High-Z Output
tWHZ
20
ns
Data to Write Time Overlap
tDW
40
50
100
ns
Data Hold from Write Time
tDH
000
ns
End Write to Low-Z Output
tOW
555
ns
相關(guān)PDF資料
PDF描述
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