參數(shù)資料
型號： N04Q1618C2BW-15C
廠商： ON SEMICONDUCTOR
元件分類： SRAM
英文描述： 256K X 16 STANDARD SRAM, 150 ns, UUC
封裝： WAFER
文件頁數(shù)： 4/13頁
文件大?。?/td> 305K
代理商： N04Q1618C2BW-15C
Stock No. 23451-D 11/06
12
The specification is ADVANCE INFORMATION and subject to change without notice.
N04Q1618C2B
Advance Information
AMI Semiconductor, Inc.
Ball Grid Array Package
Dimensions (mm)
DE
e = 0.75
BALL
MATRIX
TYPE
SD
SE
J
K
6±0.10
8±0.10
0.375
1.125
1.375
FULL
SIDE VIEW
TOP VIEW
BOTTOM VIEW
E
D
A1 BALL PAD
CORNER (3)
1.24±0.10
0.28±0.05
0.15
0.05
Z
1. 0.35±0.05 DIA.
1. DIMENSION IS MEASURED AT THE
MAXIMUM SOLDER BALL DIAMETER.
PARALLEL TO PRIMARY Z.
2. PRIMARY DATUM Z AND SEATING
PLANE ARE DEFINED BY THE
SPHERICAL CROWNS OF THE
SOLDER BALLS.
3. A1 BALL PAD CORNER I.D. TO BE
MARKED BY INK.
2. SEATING PLANE - Z
SD
SE
e
K TYP
J TYP
e
A1 BALL PAD
CORNER
相關(guān)PDF資料
PDF描述
N08M1618L1AB-85I 512K X 16 STANDARD SRAM, 85 ns, PBGA48
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
N04Q1618C2BW-15I 制造商:NANOAMP 制造商全稱:NANOAMP 功能描述:4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K】16 bit POWER SAVER TECHNOLOGY
N04Q1618C2BW-70C 制造商:NANOAMP 制造商全稱:NANOAMP 功能描述:4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K】16 bit POWER SAVER TECHNOLOGY
N04Q1618C2BW-70I 制造商:NANOAMP 制造商全稱:NANOAMP 功能描述:4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K】16 bit POWER SAVER TECHNOLOGY
N04Q1618C2BX-15C 制造商:AMI 制造商全稱:AMI 功能描述:4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K】16 bit POWER SAVER TECHNOLOGY
N04Q1618C2BX-70C 制造商:AMI 制造商全稱:AMI 功能描述:4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K】16 bit POWER SAVER TECHNOLOGY
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