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參數(shù)資料
| 型號(hào)： | N01L083WC2AT-55I |
| 元件分類(lèi)： | SRAM |
| 英文描述： | 128K X 8 STANDARD SRAM, 55 ns, PDSO32 |
| 封裝： | TSOP1-32 |
| 文件頁(yè)數(shù)： | 5/10頁(yè) |
| 文件大?。?/td> | 162K |
| 代理商： | N01L083WC2AT-55I |
(DOC# 14-02-008 REV I ECN# 01-1283)
4
The specifications of this device are subject to change without notice. For latest documentation see http://www.amis.com.
AMI Semiconductor, Inc.
N01L083WC2A
Power Savings with Page Mode Operation (WE = VIH)
Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal
organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power
saving feature.
The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open
and 8-bit words of data are read from the open page. By treating addresses A0-A3 as the least significant
bits and addressing the 16 words within the open page, power is reduced to the page mode value which is
considerably lower than standard operating currents for low power SRAMs.
Page Address (A4 - A16)
OE
CE1
CE2
Word Address (A0 - A3)
Open page
Word 1
Word 2
Word 16
...
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