參數(shù)資料
型號(hào): MX26F128J3TC-15
廠商: Electronic Theatre Controls, Inc.
英文描述: Macronix NBit TM Memory Family 128M [x8/x16] SINGLE 3V PAGE MODE eLiteFlash TM MEMORY
中文描述: 旺宏NBit商標(biāo)家庭128M的內(nèi)存[x8/x16]單3V頁(yè)模式eLiteFlash商標(biāo)記憶
文件頁(yè)數(shù): 28/47頁(yè)
文件大?。?/td> 439K
代理商: MX26F128J3TC-15
28
P/N:PM0960
REV. 1.1,OCT. 18, 2004
MX26F128J3
Figure 6. Byte/Word Programming Flowchart
Bus
Operation
Write
Command
Comments
Setup Byte/
Word Program Addr=Location to Be
Programmed
Byte/Word
Data=Data to Be
Program
Programmed
Addr=Location to Be
Programmed
Status Register Data
Data=40H
Write
Read
(Note 1)
Standby
Check SR.7
1=WSM Ready
0=WSM Busy
1. Toggling OE (low to high to low) updates the status
register. This can be done in place of issuing the Read
Status Register command. Repeat for subsequent pro-
gramming operations.
SR full status check can be done after each program
operation, or after a sequence of programming opera-
tions.
Write FFH after the last program operation to place
device in read array mode.
Bus
Operation
Standby
Command
Comments
Check SR.3
1=Programming to Voltage
Error Detect
Check SR.1
1=Device Protect Detect
RP=VIH, Block Lock-Bit is
Set Only required for
systems
Check SR.4
1=Programming Error
Standby
Standby
Toggling OE (low to high to low) updates the status
register. This can be done in place of issuing the Read
Status Register command. Repeat for subsequent pro-
gramming operations.
SR.4, SR.3, and SR.1 are only cleared by the Clear
Status Register Command in cases where multiple lo-
cation are programmed before full status is checked.
If an error is detected, clear the status register before
attempting retry or other error recovery.
Start
Write 40H,
Address
Write Data
and Address
Full Status Check if Desired
Byte/Word Program Complete
Read
Status Register
0
1
SR.7=
Read Status Register
Data (See Above)
FULL STATUS CHECK PROCEDURE
Byte/Word Program Successful
SR.3=
0
0
0
VPP Range Error
1
Programming Error
1
Device Protect Error
1
SR.1=
SR.4=
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