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參數資料
| 型號： | MX26F128J3TC-15 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Macronix NBit TM Memory Family 128M [x8/x16] SINGLE 3V PAGE MODE eLiteFlash TM MEMORY |
| 中文描述： | 旺宏NBit商標家庭128M的內存[x8/x16]單3V頁模式eLiteFlash商標記憶 |
| 文件頁數： | 11/47頁 |
| 文件大小： | 439K |
| 代理商： | MX26F128J3TC-15 |
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11
P/N:PM0960
REV. 1.1,OCT. 18, 2004
MX26F128J3
Read Array Command
The device is in Read Array mode on initial device power
up and after exit from power down, or by writing FFH to
the Command User Interface. The read configuration reg-
ister defaults to asynchronous read page mode. The de-
vice remains enabled for reads until another command
is written. The Read Array command functions indepen-
dently of the VPEN voltage.
Read Query Mode Command
This section defines the data structure or "Database"
returned by the Common Flash Interface (CFI) Query
command. System software should parse this structure
to gain critical information such as block size, density,
x8/x16, and electrical specifications. Once this informa-
tion has been obtained, the software will know which
command sets to use to enable eLiteFlash
TM
memory
writes, block erases, and otherwise control the
eLiteFlash
TM
memory component.
Query Structure Output
The Query Database allows system software to gain in-
formation for controlling the eLiteFlash
TM
memory com-
ponent. This section describes the device CFI-compliant
interface that allows the host system to access Query
data.
Query data are always presented on the lowest-order
data outputs (DQ 0-7) only. The numerical offset value is
the address relative to the maximum bus width supported
by the device. On this family of devices, the Query table
device starting address is a 10h, which is a word ad-
dress for x16 devices.
For a word-wide (x16) device, the first two bytes of the
Query structure, "Q" and "R" in ASCII, appear on the
low byte at word addresses 10h and 11h. This CFI-com-
pliant device outputs 00H data on upper bytes. Thus, the
device outputs ASCII "Q" in the low byte (DQ 0-7 ) and
00h in the high byte (DQ 8-15 ).
At Query addresses containing two or more bytes of in-
formation, the least significant data byte is presented at
the lower address, and the most significant data byte is
presented at the higher address.
相關PDF資料 |
PDF描述 |
|---|---|
| MX26F128J3XCC-12 | Macronix NBit TM Memory Family 128M [x8/x16] SINGLE 3V PAGE MODE eLiteFlash TM MEMORY |
| MX26F128J3XCC-15 | Macronix NBit TM Memory Family 128M [x8/x16] SINGLE 3V PAGE MODE eLiteFlash TM MEMORY |
| MX26L12811MC | 128M [x8/x16] SINGLE 3V PAGE MODE MTP MEMORY |
| MX26L12811MC-12 | 128M [x8/x16] SINGLE 3V PAGE MODE MTP MEMORY |
| MX28F128J3 | 128M [x8/x16] SINGLE 3V PAGE MODE FLASH MEMORY |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MX26F128J3XCC-12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Macronix NBit TM Memory Family 128M [x8/x16] SINGLE 3V PAGE MODE eLiteFlash TM MEMORY |
| MX26F128J3XCC-15 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Macronix NBit TM Memory Family 128M [x8/x16] SINGLE 3V PAGE MODE eLiteFlash TM MEMORY |
| MX26F640J3 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:64M [x8/x16] SINGLE 3V PAGE MODE eLiteFlashTM MEMORY |
| MX26F640J3TC-10 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:64M [x8/x16] SINGLE 3V PAGE MODE eLiteFlashTM MEMORY |
| MX26F640J3XCC-10 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:64M [x8/x16] SINGLE 3V PAGE MODE eLiteFlashTM MEMORY |
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