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參數(shù)資料
| 型號： | MX26F128J3TC-15 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Macronix NBit TM Memory Family 128M [x8/x16] SINGLE 3V PAGE MODE eLiteFlash TM MEMORY |
| 中文描述： | 旺宏NBit商標(biāo)家庭128M的內(nèi)存[x8/x16]單3V頁模式eLiteFlash商標(biāo)記憶 |
| 文件頁數(shù)： | 2/47頁 |
| 文件大?。?/td> | 439K |
| 代理商： | MX26F128J3TC-15 |
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2
P/N:PM0960
REV. 1.1,OCT. 18, 2004
MX26F128J3
GENERAL DESCRIPTION
The MXIC's MX26F128J3 series eLiteFlash
TM
memory
use the most advance 2 bits/cell Nbit technology, double
the storage capacity of memory cell. The device provide
the high density eLiteFlash
TM
memory solution with reli-
able performance and most cost-effective.
The device organized as by 8 bits or by 16 bits of output
bus. The device is packaged in 56-Lead TSOP and 64-
ball CSP. It is designed to be reprogrammed and erased
in system or in standard EPROM programmers.
The device offers fast access time and allowing opera-
tion of high-speed microprocessors without wait states.
To eliminate bus contention, the device has separate chip
enable (CE0, CE1, CE2) and output enable (OE) con-
trols. The device augment EPROM functionality with in-
circuit electrical erasure and programming. The device
uses a command register to manage this functionality.
The MXIC's Nbit technology reliably stores memory con-
tents even after the specific erase and program cycles.
The MXIC cell is designed to optimize the erase and
program mechanisms by utilizing the dielectric's charac-
ter to trap or release charges from ONO layer.
The device uses a 3.0V to 3.6V VCC supply to perform
the High Reliability Erase and auto Program/Erase algo-
rithms.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up pro-
tection is proved for stresses up to 100 milliamps on
address and data pin from -1V to VCC + 1V.
PIN CONFIGURATION
56 TSOP (14mm x 20mm)
A22
CE1
A21
A20
A19
A18
A17
A16
VCC
A15
A14
A13
A12
CE0
VPEN
RESET
A11
A10
A9
A8
GND
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
NC
WE
OE
STS
Q15
Q7
Q14
Q6
GND
Q13
Q5
Q12
Q4
VCCQ
GND
Q11
Q3
Q10
Q2
VCC
Q9
Q1
Q8
Q0
A0
BYTE
A23
CE2
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MX26F128J3XCC-12 | Macronix NBit TM Memory Family 128M [x8/x16] SINGLE 3V PAGE MODE eLiteFlash TM MEMORY |
| MX26F128J3XCC-15 | Macronix NBit TM Memory Family 128M [x8/x16] SINGLE 3V PAGE MODE eLiteFlash TM MEMORY |
| MX26L12811MC | 128M [x8/x16] SINGLE 3V PAGE MODE MTP MEMORY |
| MX26L12811MC-12 | 128M [x8/x16] SINGLE 3V PAGE MODE MTP MEMORY |
| MX28F128J3 | 128M [x8/x16] SINGLE 3V PAGE MODE FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MX26F128J3XCC-12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Macronix NBit TM Memory Family 128M [x8/x16] SINGLE 3V PAGE MODE eLiteFlash TM MEMORY |
| MX26F128J3XCC-15 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Macronix NBit TM Memory Family 128M [x8/x16] SINGLE 3V PAGE MODE eLiteFlash TM MEMORY |
| MX26F640J3 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:64M [x8/x16] SINGLE 3V PAGE MODE eLiteFlashTM MEMORY |
| MX26F640J3TC-10 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:64M [x8/x16] SINGLE 3V PAGE MODE eLiteFlashTM MEMORY |
| MX26F640J3XCC-10 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:64M [x8/x16] SINGLE 3V PAGE MODE eLiteFlashTM MEMORY |
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